First Demonstration of Waferscale Heterogeneous Integration of Ga<sub>2</sub>O<sub>3</sub> MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Xu, Wenhui; Zhang, Yuhao; Wang, Xi; Wang, Yibo; You, Tiangui; Ou, Xin; Han, Genquan; Hu, Haodong; Zhang, Shibin; Mu, Fengwen; Suga, Tadatomo

doi:10.1109/iedm19573.2019.8993501

Cited by 60 publications

(63 citation statements)

References 17 publications

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“…The lack of this data makes it difficult to compare Ga 2 O 3 with commercial device technologies (e.g., Si, SiC, GaN) and evaluate the application space of Ga 2 O 3 devices. Some recent works characterized the channel (or junction) temperatures in Ga 2 O 3 devices [12]- [15] and studied different approaches to lower device temperatures, e.g., heterogenous integration [16]- [20] and substrate thinning [21]. However, all of these devices have small areas with a current much lower than 1 Amp, and none of these devices are packaged.…”

Section: Introductionmentioning

confidence: 99%

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Wang

Xiao

Knoll

et al. 2021

IEEE Electron Device Lett.

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The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junctionto-case thermal resistance (R θJC ) in the bottom-side-and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction-and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. The R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

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Section: Introductionmentioning

confidence: 99%

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Wang

Xiao

Knoll

et al. 2021

IEEE Electron Device Lett.

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“…To further understand the design space of the surge current capabilities of Ga2O3 devices, two additional die-level thermal management approaches were considered: thinning of the Ga2O3 substrate, and bonding Ga2O3 device layers to a SiC wafer [21]. Using the calibrated simulation models, Fig.…”

Section: Benchmark Discussion and Conclusionmentioning

confidence: 99%

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

Xiao

Wang

Liu

et al. 2021

IEEE Trans. Power Electron.

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Ultra-wide-bandgap gallium oxide (Ga2O3) devices have recently emerged as promising candidates for power electronics; however, the low thermal conductivity (kT) of Ga2O3 causes serious concerns about their electrothermal ruggedness. This work presents the first experimental demonstrations of largearea Ga2O3 Schottky barrier diodes (SBDs) packaged in the bottom-side-cooling and double-side-cooling configurations, and for the first time, characterizes the surge current capabilities of these packaged Ga2O3 SBDs. Contrary to popular belief, Ga2O3 SBDs with proper packaging show high surge current capabilities. The double-side-cooled Ga2O3 SBDs with a 3×3 mm 2 Schottky contact area can sustain a peak surge current over 60 A, with a ratio between the peak surge current and the rated current superior to that of similarly-rated commercial SiC SBDs. The key enabling mechanisms for this high surge current are the small temperature dependence of on-resistance, which strongly reduces the thermal runaway, and the double-side-cooled packaging, in which the heat is extracted directly from the Schottky junction and does need to go through the low-kT bulk Ga2O3 chip. These results remove some crucial concerns regarding the electrothermal ruggedness of Ga2O3 power devices and manifest the significance of their die-level thermal management. 1

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“…It has been reported that InP heterojunction bipolar transistors (HBTs) can be integrated on Si materials platforms within silicon fabrication facilities [59], as presented in Figure 8(c). Based on the ion-cutting technology [60][61][62][63], the researchers realized different kinds of wafer scale heterogeneous integration materials, e.g., GaAs/Si, InP/Si, LiTaO 3 /Si, LiNbO 3 /Si, SiC/Si, and Ga 2 O 3 /SiC, as shown in Figure 8(d).…”

Section: Cross-dimensional Heterogeneous Integrationmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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First Demonstration of Waferscale Heterogeneous Integration of Ga₂O₃ MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Cited by 60 publications

References 17 publications

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability

Recent progress of integrated circuits and optoelectronic chips

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First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Cited by 60 publications

References 17 publications

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability

Recent progress of integrated circuits and optoelectronic chips

Contact Info

Product

Resources

About

First Demonstration of Waferscale Heterogeneous Integration of Ga₂O₃ MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability