1999
DOI: 10.1016/s0167-9317(99)00046-5
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Finite element simulation of ion-beam lithography mask fabrication

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Cited by 8 publications
(2 citation statements)
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“…Normally, a stress level on the order of 10 MPa is enough to ensure the flatness of the mask membranes 6. Displacement and deformation by this level of stresses has to be compensated in the mask design stage, and the amount of compensation can be estimated by measurement31 or numerical modeling 32…”
Section: Projection Masks and Resistsmentioning
confidence: 99%
“…Normally, a stress level on the order of 10 MPa is enough to ensure the flatness of the mask membranes 6. Displacement and deformation by this level of stresses has to be compensated in the mask design stage, and the amount of compensation can be estimated by measurement31 or numerical modeling 32…”
Section: Projection Masks and Resistsmentioning
confidence: 99%
“…[4][5][6] To effectively employ PSE it is necessary to understand the mechanical properties of the prestressed mask and to calculate the distortions that will appear during mask fabrication, using the finite element method. [4][5][6] To effectively employ PSE it is necessary to understand the mechanical properties of the prestressed mask and to calculate the distortions that will appear during mask fabrication, using the finite element method.…”
Section: Introductionmentioning
confidence: 99%