Comparison of silicon stencil mask distortion measurements with finite element analysis

Ehrmann, Albrecht; Struck, Thomas; Chalupka, A.; Haugeneder, E.; Löschner, H.; Butschke, Joerg; Irmscher, Mathias; Letzkus, Florian; Springer, Reinhard; Degen, A.; Rangelow, I. W.; Shi, Frank G.; Sossna, E.; Volland, Burkhard E.; Engelstad, Roxann L.; Lovell, Edward G.; Tejeda, R.

doi:10.1116/1.590962

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…8 For the case of ECES fabricated Si membranes the thickness depends on the pn junction space-charge region. This can be explained as follows with the assumptions ͑i͒ that near the pn junction (xϭ0) in the thermal equilibrium the charge density is zero outside of the transition region (Ϫx p 0 ϽxϽx n 0 ) since bulk silicon is electrically neutral, ͑ii͒ that the minority electrons on the p side and the minority holes on the n side are neglected, and ͑iii͒ that the majority carrier concentrations are close to the doping concentrations near the edge of the transition region.…”

Section: Pn Junction Eces Techniques For Silicon Membrane Fabricamentioning

confidence: 99%

Thickness analysis of silicon membranes for stencil masks

Sossna

Kassing

Rangelow

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Sossna, E.; Kassing, R.; Rangelow, I. W.; Herzinger, C. M.; Tiwald, T. E.; Woollam, John A.; and Wagner, Th., "Thickness analysis of silicon membranes for stencil masks" (2000). Stencil masks are key to charged particle projection lithography, in particular for ion projection lithography. To fulfill pattern printing requirements in the sub-70 nm regime, excellent thickness uniformity and thermal emissivity control are critical parameters for high quality stencil mask fabrication. We propose and demonstrate a technique based on infrared variable angle spectroscopic ellipsometry ͑IR-VASE͒ to measure these parameters with adequate accuracy and precision. The refractive index of the Si membrane was evaluated using a Sellmeier dispersion model combined with a Drude model. Because of its spectral range from 2 to 33 m, the IR-VASE method is sensitive to the thickness of layers as well as to the concentration and profile of Si membrane doping.

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Section: Pn Junction Eces Techniques For Silicon Membrane Fabricamentioning

confidence: 99%

Thickness analysis of silicon membranes for stencil masks

Sossna

Kassing

Rangelow

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…The difference between the FE result and measurements have a 3y value of24 nm in the best case [6]. After applying a magnification correction, the deviation between FE calculations and experiment can be as small as 18 nm 3.…”

Section: Fe Calculationsmentioning

confidence: 99%

“…In order to predict process-induced distortions of the membrane, a Finite Element (FE) model has been developed simulating the wafer patterning and membrane fabrication process [6]. The model includes the orthotropic elastic properties of silicon as well as the initial warp of the wafer, the actual mask geometry and the initial membrane stress due to doping.…”

Section: Fe Calculationsmentioning

confidence: 99%