Nanoelectronic Circuit Design 2010
DOI: 10.1007/978-1-4419-7609-3_2
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FinFET Circuit Design

Abstract: Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic design styles, novel circuit designs, and layout considerations.

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Cited by 85 publications
(30 citation statements)
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References 24 publications
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“…We observe that simple cell-based estimates (as is the state-of-the-art) to assess rule quality can be misleading highlighting the importance of the ChipDRE framework 8 .…”
Section: Resultsmentioning
confidence: 94%
“…We observe that simple cell-based estimates (as is the state-of-the-art) to assess rule quality can be misleading highlighting the importance of the ChipDRE framework 8 .…”
Section: Resultsmentioning
confidence: 94%
“…FinFET device structure [11] 978-1-4799-3378-5/14/$31.00 ©2014 IEEE Three modes of FinFET operation [12] are generally used which are the Shorted Gate (SG) mode where the front and the back gate are tied together; Low Power (LP) mode where the back gate is negative or positive biased depending on NFET or PFET; and the Independent Gate (IG) mode where different signals are used to drive the front and the back gate. A mix of the SG and the LP modes can be used to develop mixed mode design style [14]. SG mode is used at critical path of the circuit as it has high ON current.…”
Section: Finfet Based Circuit Designmentioning
confidence: 99%
“…Studying faults that may affect new technologies such as FinFET [47], starts from the definition of predictive models [48] for the technology and requires the development of models for the basic cells (e.g., memory cells, boolean gates, etc.) that need to be analyzed.…”
Section: A Cross-layer Approach For System Reliability Evaluationmentioning
confidence: 99%