Fine Structure of Emission Spectra of the Red AIN:Mn Luminescence

Abstract

The luminescence of aluminium nitride, activated by manganese, is described. A structure with equidistant peaks, clearly resolved at low temperatures, is found in the emission band 580 to 620 nm. This structure is interpreted in terms of phonons using the Pekar theory. The energy of the phonon involved is 0.023 eV. The luminescence decay is exponential with a time constant τ = 1.0 × 10−3 s over a wide temperature range. It is suggested that the luminescence is due to transitions between metastable and basic levels of the tetravalent manganese ion.

Luminescence Properties of AlN Ceramics and Its Potential Application for Solid State Dosimetry

“…This emission band usually is interpreted as luminescence of tetravalent manganese ion Mn 4+ substituting for Al ion, and equidistant peaks are ascribed to phonon replicas. For the first time this band was observed and interpreted in (Karel et al, 1966) and later studied in other works (Benabdesselam et al, 1995). However, some authors (Miyajima at al., 2006) basing on the results of X-ray absorption fine structure measurements, state that this band is caused by Mn ion having charge between +2 and +3.…”

Analysis of the local structure of AlN:Mn using X‐ray absorption fine structure measurements

“…Among AlN materials, AlN:Mn shows red-orange photoluminescence (PL) and cathodoluminescence (CL) with a 600 nm-peak [1][2][3]. The possibility of constructing an electroluminescence (EL) device using this material has been suggested by the preliminary results on the EL operation of powder AlN:Mn [4,5].…”

Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices

“…In this paper, we report preparation of AlN:Mn films by MOCVD using bismethylcyclopentadienylmanganese [(CH 3 C 5 H 4 ) 2 Mn, abbreviated as (MeCp) 2 Mn] as a Mn source. The characterization of photoluminescence (PL) focusing on the T s dependence has revealed that even the film grown at 400 °C shows bright PL at room temperature.…”

“…Among group III nitrides, AlN:Mn, which exhibits red-orange emission from Mn 4+ ions [2,3], has potential applications for large-area display devices such as an electroluminescent (EL) panel. For this purpose, it is desirable to grow the films of this material with high luminescence quality at low substrate temperatures from a viewpoint of reducing the production cost.…”

“…The supply rate of TMAl and NH 3 were 2.5 × 10 -6 and 5.6 × 10 -2 mol/min, respectively, under which the growth rate of the layers was about 3 µm/h. The Mn source, (MeCp) 2 Mn, which has a melting point of 61-62 °C, was vaporized in a stainless-steel container and delivered to the reactor by the H 2 carrier gas. The supply rate of the Mn source was controlled by changing the tempera- ture of the container from 10 to 30 °C and the flow rate of the carrier gas up to 100 sccm, which enabled us to control Mn concentration (C Mn ) in the films between 2 × 10 18 and 1 × 10 21 cm -3 .…”