Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Tue, Phan Trong; Shimoda, Tatsuya; Takamura, Yuzuru

doi:10.1016/j.ceramint.2016.08.177

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…ZnO and PZT films are usually used as piezoelectric layers in pMUTs [ 15 , 16 , 17 , 18 , 19 , 20 ]. Compared with that of PZT film the deposition process of ZnO film is simple and compatible with micromachining technology [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ]. In order to improve the properties of pMUT, Belgacem studied the influence of centred and ring top electrode on the coupling factor of pMUT with a circular piezoelectric composite diaphragm released by the expensive deep reactive ion etch (DRIE) process, and they found that when the PZT was removed outside the electrode this can improve the coupling factor [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film

Ren

Fan

et al. 2017

Sensors

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A square piezoelectric composite diaphragm was analyzed by the finite element method to enhance the sensitivity of a piezoelectric micromachined ultrasound transducer (pMUT). The structures of electrode and piezoelectric film were optimized and a centric electrode was designed to avoid the counteraction of stress in the centre and edges. In order to further improve the sensitivity; a pMUT with partially-etched piezoelectric film was adopted. The receive and transmit sensitivities of the pMUT were analyzed in details. The receive sensitivity of pMUT with partially-etched ZnO film is 3.3 dB or 6.8 dB higher than those with a centric and whole electrode, respectively; and the amplitude of a partially-etched ZnO film pMUT under a certain voltage is 5.5 dB and 30 dB higher than those with centric and whole electrode separately. Two pMUT-based ZnO films were fabricated by micromachining technology and their receive and transmit sensitivities were tested. The ZnO films deposited by direct current (DC) magnetron sputtering exhibit a densely packed structure with columnar crystallites. The test results show that the structure of the square diaphragm with partially-etched piezoelectric layer can significantly improve the transducer sensitivity. The receive sensitivity and transmit sensitivity are −238.35 dB (ref. 1 V/μPa) and 150.42 dB (ref. 1 μPa/V); respectively.

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Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film

Ren

Fan

et al. 2017

Sensors

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“…However, the feature size was mostly limited above 50 μm, and also PZT films exhibited random crystalline structure, large leakage current, and rather poor ferroelectric properties. Recently, Tue et al demonstrated sub-5 μm pattern of sol-gel-derived PZT films with a thickness of 80-390 nm by a novel lift-off process using solution-processed amorphous metal oxides as a sacrificial layer (Figure 13) [59]. The process includes three steps as follows: (1) deposition and patterning of the sacrificial lift-off layer (In-Zn-O), (2) PZT spin coating, and (3) etching of the sacrificial layer for PZT lift-off.…”

Section: Lift-off Processmentioning

confidence: 99%

“…AFM image of fine PZT pattern: (a) 2D morphology, (b) 3D morphology, and (c) local surface morphology[59].…”

mentioning

confidence: 99%

Lead Zirconium Titanate Films and Devices Made by a Low- Temperature Solution-Based Process

Tue¹,

Takamura²

2018

Ferroelectrics and Their Applications

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As the most important multifunctional oxide material, lead zirconium titanate (PZT) has a diverse range of applications such as piezo actuators, ferroelectric nonvolatile memories, sensors, and transducers due to its excellent structural and electrical properties. However, it generally requires a high annealing temperature (above 600°C) to attain the desired properties, which hinders the integration of PZT with silicon-based Complementary Metal Oxide Semiconductor (CMOS). Therefore, the fabrication of PZT films by a chemical solution deposition (CSD) at temperatures compatible with Si-CMOS technology or even with polymeric substrate for flexible electronics would be of high technological interest. So far, different strategies to decrease the crystallization temperature of CSD-derived PZT films have been studied. This chapter presents a critical review on the low-temperature solution-processed PZT films and devices, and addresses challenges for fundamental understanding and practical integration of multifunctional PZT in devices. In the first part, recent advances in fabrication of CSD-derived PZT films at a low temperature are thoroughly reviewed. The second part discusses various techniques for patterning PZT into micro-nano-sized patterns. Lastly, some potential applications of the low-temperature CSD-derived PZT films and devices are demonstrated.

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Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

Shi

Yang

et al. 2020

Physics Letters A

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Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Cited by 4 publications

References 21 publications

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film

Design and Fabrication of Piezoelectric Micromachined Ultrasound Transducer (pMUT) with Partially-Etched ZnO Film

Lead Zirconium Titanate Films and Devices Made by a Low- Temperature Solution-Based Process

Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

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