Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

Shi, Peng; Yang, Yan; Li, Huisen; Zou, Zhijun; Zhu, Benpeng; Zhang, Yue; Ouyang, Jun; Chen, Shi; Yang, Xiaofei

doi:10.1016/j.physleta.2019.126232

Cited by 8 publications

(4 citation statements)

References 22 publications

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“…; research has been done to reduce size and weight of such devices, and to improve performance. [1][2][3][4] Most of these studies dealt with rigid crystalline substrates suitable for epitaxial growth of perovskite-type oxides. However, recently researchers explore formation of such thin films on flexible polymer sheet, thus assuming application to flexible wearable devices and sensors.…”

Section: Introductionmentioning

confidence: 99%

“…Perovskite‐type oxide thin films featuring ferroelectric properties are used in non‐volatile memory, ultrasonic transducers, piezoelectric devices, etc. ; research has been done to reduce size and weight of such devices, and to improve performance 1‐4 . Most of these studies dealt with rigid crystalline substrates suitable for epitaxial growth of perovskite‐type oxides.…”

Section: Introductionmentioning

confidence: 99%

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Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Mizuyama

Nishikawa

2023

Elect Comm in Japan

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Epitaxial thin films of a ferroelectric perovskite‐type oxide grown on single‐crystalline SrTiO3 (100) were transferred onto a flexible printed circuit (FPC). In the case that the thin films were directly adhered onto FPC using a copper foil double‐coated conductive adhesive tape (Cu double‐sided tape), serious cracking and exfoliation occurred during the transfer process. To avoid these damages, we have tried to insert a metal buffer layer with excellent ductility between the ferroelectric oxide thin film and the Cu double‐sided tape. The platinum buffer layer was found to be appropriate to establish a crack‐ and exfoliation‐free transfer process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Mizuyama

Nishikawa

2023

Elect Comm in Japan

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“…The reported ferroelectric-gated photodetectors with 2D channel materials, such as MoS 2 [28] and In 2 Se 3 , [29] engage ferroelectric polymer top gate, which adds complexity in device fabrication. These pioneering endeavors have inspired us to introduce the ferroelectric PbZr x Ti (1Àx) O 3 (PZT) [30][31][32] substrate as the bottom gate dielectric to tune the photoresponsivity of the GeSe-based photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

Zhao

et al. 2021

Physica Rapid Research Ltrs

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GeSe, a black phosphorus analogue, has great potential in the applications of optoelectronic devices due to its distinct optical properties and air stability. Developing techniques that can boost the photoresponsivity of GeSe-based photodetectors is essential to promoting their practical applications. Herein, ferroelectric PbZr x Ti 1Àx O 3 (PZT) gating is introduced as an effective method to enhance the performance of GeSe-based transistors. Comparative study on the performance of conventional Si/SiO 2 -and PZT-gated GeSe phototransistors demonstrates a 3.1 times increase in photoresponsivity under zero gate voltage by ferroelectric gating. Furthermore, the PZT-gated photodetector shows a rise time of 52 ms and a maximal external quantum efficiency (EQE) of 45% across the visible and near-infrared range. These results indicate that ferroelectric gating is a promising methodology to enhance the performance of GeSe-based photodetectors. This work paves a new pathway toward developing highperformance photodetectors.

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“…It is found that the W rec and η obtained in BF-ST/BST N =10 film are comparable to most of the BF-based films deposited via PLD, chemical solution deposition, and radio frequency magnetron sputtering methods, except for the epitaxial 0.25BiFeO 3 -0.3BaTiO 3 -0.45SrTiO 3 film. ,,− Generally, ferroelectric film prepared by a PLD method is grown along the column, and thus, its structure is compact, resulting in a high E b . However, the compactness for the film prepared via a chemical solution method is decreased to some extent due to the presence of voids in microstructure caused by the volatilization of organic substance, which inevitably leads to relatively high leakage current density and reduced insulation in contrast to the PLD technique. Thus, slightly lower values of W rec and η are observed in our designed ternary film compared with the epitaxial 0.25BiFeO 3 -0.3BaTiO 3 -0.45SrTiO 3 film .…”

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confidence: 99%

4-inch Ternary BiFeO₃–BaTiO₃–SrTiO₃ Thin Film Capacitor with High Energy Storage Performance

Qian

Yang

et al. 2021

ACS Energy Lett.

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BiFeO3–BaTiO3 is a promising base for developing high energy density capacitors. However, no reports have been available on fabrication of binary or even ternary BiFeO3–BaTiO3 based solid solution films via a chemical solution route since Ba2+ and Bi3+ are incompatible. Here, we developed a chemical route via alternative coating layers of relaxor ferroelectric 0.4BiFeO3-0.6SrTiO3 and paraelectric Ba0.5Sr0.5TiO3 to realize a BiFeO3–BaTiO3–SrTiO3 film with the assistance of element interface diffusion. A remarkably improved energy density of 98 J cm–3 and a high efficiency of 80% are obtained in the film with optimized layer thickness because of its large dielectric constant, high breakdown strength, and strong relaxor behavior. Of particular interest, the fabrication technique allows deposition of film over an entire 4-in. silicon wafer with good uniformity and comparable energy-storage performance. The strategy can be applicable for fabrication of large-area dielectric or other films with incompatible elements in their precursor solution.

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Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

Cited by 8 publications

References 22 publications

Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

4-inch Ternary BiFeO₃–BaTiO₃–SrTiO₃ Thin Film Capacitor with High Energy Storage Performance

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Study on the properties of Pb(Zr,Ti)O3 thin films grown alternately by pulsed laser deposition and sol-gel method

Cited by 8 publications

References 22 publications

Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Effect of platinum buffer layer on the fabrication process of flexible ferroelectric epitaxial thin films

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

4-inch Ternary BiFeO3–BaTiO3–SrTiO3 Thin Film Capacitor with High Energy Storage Performance

Contact Info

Product

Resources

About

4-inch Ternary BiFeO₃–BaTiO₃–SrTiO₃ Thin Film Capacitor with High Energy Storage Performance