“…[1] However, when it comes to incorporating ferroelectric thin films into complementary metal-oxide-semiconductor (CMOS) processes, temperature incompatibility is a major challenge. High-quality ferroelectric thin films require crystallization temperatures above 600 • C [2], but CMOS processes cannot withstand temperature above 400 • C, mainly due to the use of metallic circuit materials, as well as modification of the dopant profiles within the various layers, resulting in loss of functionalities. [3] Moreover, demand for transparent touching panels and peel-and-stick sensors [4,5,6,7] has greatly increased in recent years.…”