Fine-Line Metrology

Postek, Michael T.; Larrabee, Robert D.

doi:10.1016/b978-0-08-034724-0.50047-0

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…As stated above, electron beam-based photomask metrology has been around for many years, but has not been as extensively utilized in the production metrology of photomasks. The issues regarding SEM metrology are as complex as those for optical metrology and were reviewed by Postek and Vladar [2], Postek and Larrabee [7] and Postek and Joy [8]. Unfortunately, since not as large a number of inspection instruments for photomask metrology are required for semiconductor manufacturing this not been as hot a topic for industrial research and development.…”

Section: Photomask Metrologymentioning

confidence: 99%

Application of High Pressure/Environmental Scanning Electron Microscopy to Photomask Dimensional Metrology

Postek¹,

Vladár²

2003

AIP Conference Proceedings

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The application of high pressure or environmental microscopy techniques is not new to scanning electron microscopy. However, application of this methodology to semiconductor metrology is new because of the combined need for implementation of high resolution, high brightness field emission technology in conjunction with large chamber and sample transfer capabilities. This methodology employs a gaseous environment to help neutralize the charge build-up that occurs under irradiation with the electron beam. Although potentially very desirable for the charge neutralization, this methodology has not been seriously employed in photomask or wafer metrology until now. This is a new application of this technology to this area, but it shows great promise in the inspection, imaging and metrology of photomasks in a charge-free operational mode. For accurate metrology, this methodology affords a path that minimizes, if not eliminates, the need for charge modeling.

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Section: Photomask Metrologymentioning

confidence: 99%