2004
DOI: 10.1117/1.1668271
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Photomask dimensional metrology in the scanning electron microscope, part I: Has anything really changed?

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Cited by 5 publications
(4 citation statements)
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“…Here, the surface potential can cause some undesirable effects by affecting motion states of both secondary electrons (SEs) emitted from the insulator surface and primary electrons (PEs) (see, for example, Ko et al, 1998;Zhang et al, 2003;Postek et al, 2004;Cazaux, 2005). On the other side, it can be utilized to image surface and buried structures of insulators in SEM (Ura, 1998;Koike et al, 1999;Zhang et al, 2004;Kokhanchik, 2009).…”
Section: Introductionmentioning
confidence: 98%
“…Here, the surface potential can cause some undesirable effects by affecting motion states of both secondary electrons (SEs) emitted from the insulator surface and primary electrons (PEs) (see, for example, Ko et al, 1998;Zhang et al, 2003;Postek et al, 2004;Cazaux, 2005). On the other side, it can be utilized to image surface and buried structures of insulators in SEM (Ura, 1998;Koike et al, 1999;Zhang et al, 2004;Kokhanchik, 2009).…”
Section: Introductionmentioning
confidence: 98%
“…This methodology shows great potential if optimal balance can be achieved in a reproducible manner. This methodology, although potentially desirable for charge neutralization, has not been seriously employed in photomask or wafer metrology [50]. This is largely because there is not an instrument available for full-scale production samples with high throughput.…”
Section: 0 Some Methods For Charge Mitigationmentioning
confidence: 99%
“…This methodology shows great potential if optimal balance can be achieved in a reproducible manner. This methodology, although potentially desirable for charge neutralization, has not been seriously employed in photomask or wafer metrology [46]. This is largely because there is not an instrument available for full-scale production samples with high throughput.…”
Section: 0 Methods For Charge Mitigationmentioning
confidence: 99%
“…This is largely because there is not an instrument available for full-scale production samples with high throughput. VPSEM was proven to be useful for photomask metrology [46] but no in-line instrument was developed to use the technology, either. Variable pressure microscopy offers advantages of possible application of higher accelerating voltages and different contrast mechanisms [47].…”
Section: 0 Methods For Charge Mitigationmentioning
confidence: 99%