Summary:Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. Testing and proving that the instrument is performing at a satisfactory level of sharpness is an important aspect of quality control. The application of Fourier analysis techniques to the analysis of SEM images is a useful methodology for sharpness measurement. In this paper, a statistical measure known as the multivariate kurtosis is proposed as an additional useful measure of the sharpness of SEM images. Kurtosis is designed to be a measure of the degree of departure of a probability distribution. For selected SEM images, the two-dimensional spatial Fourier transforms were computed. Then the bivariate kurtosis of this Fourier transform was calculated as though it were a probability distribution. Kurtosis has the distinct advantage that it is a parametric (i.e., a dimensionless) measure and is sensitive to the presence of the high spatial frequencies necessary for acceptable levels of image sharpness. The applications of this method to SEM metrology will be discussed.
Until relatively recently, opticallinewidth measurement systems were the only practical tools for monitoring feature sizes produced by lithographic processes. With the shrinking of feature dimensions to the submicrometer level, and the concern over diffraction and wavelength limitations of optical tools, many fabrication lines jumped to scanning electron microscope (SEM) measurement tools as the panacea to all of the problems and limitations of existing optical systems. In response, new optical systems have appeared including ultraviolet and laser scanning systems. This paper and an accompanying paper on SEM systems in this issue of the Journal of Research [1]1, assess the capabilities and limitations of each of these technologies and look at how well they will be able to meet the measurement needs of present and future semiconductor processing technologies.
X-ray masks present a measurement object that is different from most other objects used in semiconductor processing because the support membrane is, by design, x-ray transparent. This characteristic can be used as an advantage in electron beam-based x-ray mask metrology since, depending upon the incident electron beam energies, substrate composition and substrate thickness, the membrane can also be essentially electron transparent. The areas of the mask where the absorber structures are located are essentially x-ray opaque, as well as electron opaque. This paper shows that excellent contrast and signal-to-noise levels can be obtained using the transmitted-electron signal for mask metrology rather than the more commonly collected secondary electron signal. Monte Carlo modeling of the transmitted electron signal was used to support this work in order to determine the optimum detector position and characteristics, as well as in determining the location of the edge in the image profile. The comparison between the data from the theoretically-modeled electron beam interaction and actual experimental data were shown to agree extremely well, particularly with regard to the wall slope characteristics of the structure. Therefore, the theory can be used to identify the location of the edge of the absorber line for linewidth measurement. This work provides one approach to improved x-ray mask linewidth metrology and a more precise edge location algorithm for measurement of feature sizes on x-ray masks in commercial instrumentation. This work also represents an initial step toward the first SEM-based accurate linewidth measurement standard from NIST, as well as providing a viable metrology for linewidth measurement instruments of x-ray masks for the lithography community.
The basic premise underlying the use of the scanning electron microscope (SEM) for linewidth metrology in semiconductor research and production applications is that the video image acquired, displayed, analyzed, and ultimately measured accurately reflects the structure of interest. However, it has been clearly demonstrated that image distortions can be caused by the detected secondary electrons not originating at the point of impact of the primary electron beam and by the type and location of the secondary electron detector. These effects and their contributions to the actual image or linewidth measurement have not been fully evaluated. Effects due to uncertainties in the actual location of electron origination do not affect pitch (line center‐to‐center or similar‐edge‐location‐to‐similar‐edge‐location spacing) measurements as long as the lines have the same edge geometries and similar profiles of their images in the SEM. However, in linewidth measurement applications, the effects of edge location uncertainty are additive and thus give twice the edge detection error to the measured width. The basic intent of this work is to demonstrate the magnitude of the errors introduced by beam/specimen interactions and the mode of signal detection at a variety of beam acceleration voltages and to discuss their relationship to precise and accurate metrology.
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