Filtering characteristics of a graphene ribbon with a rectangle ring in infrared region

Wang, Yueke; Hong, Xiaobin; Yang, Guofeng; Sang, Tian

doi:10.1063/1.4967822

Cited by 6 publications

(3 citation statements)

References 23 publications

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“…The m c can be altered by providing a DC bias voltage to the graphene layer as shown in figure 1(e). An ion-gel layer with a permittivity of 1.852 and height of h g is placed over the graphene layer, allowing all of the periodically structured unit cells to be biased together [19,38,49,50]. In the fabrication process, Chemical vapor deposition (CVD) method can be used to grow two graphene layers, one of which is then transferred to the other side of the polyimide substrate.…”

Section: Structure Of Proposed Absorbermentioning

confidence: 99%

Graphene-based ultra-wideband absorber for terahertz applications using hexagonal split ring resonators

Upender¹,

Kumar²

2022

Phys. Scr.

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In this paper, a hexagonal split ring ultra-wideband absorber is proposed at THz frequency. The proposed structure consists of four graphene based hexagonal split rings, a dielectric substrate and graphene layer at the bottom. The proposed absorber achieves an ultra-wideband absorption characteristics from 0.95 THz to 2.96 THz with percentage bandwidth of 102.8% and bandwidth of 2.1THz with absorptivity beyond 90%. Also, 100% absorption is achieved from 2.07 to 2.33 THz making this unique feature for THz applications. Ultra-wideband response is mainly resulted because of overlapping of strong Electromagnetic (EM) resonance of the four split rings. The modes generated within the graphene split rings are merged for achieving ultra wide band response. Furthermore, the proposed absorber is polarization insensitive because of symmetry geometry and also exhibits absorption greater than 90% for incidence angle up to 75o for both TE and TM waves. In addition, tunability is achieved by varying the graphene chemical potential. These features make the proposed metal free absorber useful for terahertz applications and future nanoscale systems. The proposed absorber shows narrow absorption characteristics for higher graphene chemical potential values which can also be utilized for sensor applications.

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Section: Structure Of Proposed Absorbermentioning

confidence: 99%

Graphene-based ultra-wideband absorber for terahertz applications using hexagonal split ring resonators

Upender¹,

Kumar²

2022

Phys. Scr.

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“…The width of the graphene ribbon is inversely proportional to the wave vectors of EGSPs and EGSPs modes show cut-off behavior [25]. Conventional straight ribbon waveguides, including multilayer nano-ribbon [26], ribbon resonators with rings [27] and wrings [28], are studied in detail. A graphene bending ribbon waveguide is proposed to explore the spatial coupling between the edge modes [29].…”

Section: Introductionmentioning

confidence: 99%

Mode Conversion of the Edge Modes in the Graphene Double-Ribbon Bend

2019

Self Cite

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In this paper, a new kind of graphene double-ribbon bend structure, which can support two edge graphene surface plasmons (EGSPs) modes, is proposed. In this double-ribbon bend, one edge mode can be partly converted into another one. We attribute the mode conversion mechanism to the interference between the two edge plasmonic modes. Based on the finite element method (FEM), we calculate the transmission and loss of EGSPs propagating along this graphene double-ribbon bend in the mid-infrared range under different parameters.

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“…However, its transmission bandwidth is much broader than the needed wavelength range, so it is more difficult to achieve excellent optical filter properties. Integrating plasmon metasurfaces on the packaging cap is an effective method to solve this problem [19]. Metasurfaces with extraordinary optical transmission (EOT) can be synthesized by applying plasmon resonances sustained by subwavelength aperture structures [20][21][22][23].…”

mentioning

confidence: 99%

A Novel 3D Encapsulation Structure Based on Subwavelength Structure and Inserted Pyrex Glass for RF MEMS Infrared Detectors

Zhao

Song

et al. 2019

Electronics

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A novel wafer-level three-dimensional (3D) encapsulation structure was designed for radio-frequency microelectromechanical system (RF MEMS) infrared detectors and investigated by using the finite element method (FEM) simulation. A subwavelength structure with a circular array of coaxial apertures was designed to obtain an extraordinary optical transmission (EOT) on top of a silicon substrate. For perpendicular incident light, a maximum transmission of 56% can be achieved in the long-wave infrared (LWIR) region and the transmission bandwidth covered almost the full LWIR region. Moreover, the maximum transmission could be further promoted with an increase in the incident angle. The vertical silicon vias, insulated by inserted Pyrex glass, were used to generate electrical contacts. With the optimized structure parameters, a feed-through level lower than −82 dB, and a transmission coefficient of one single via of more than −0.032 dB were obtained at a frequency from 0 to 2 GHz, which contributed to the low-loss transmission of the RF signals. Due to the matched thermal expansion coefficients (TECs) between silicon and Pyrex glass, the proposed via structure has excellent thermal reliability. Moreover, its thermal stress is much less than that of a conventional through-silicon via (TSV) structure. These calculated results demonstrate that the proposed 3D encapsulation structure shows enormous potential in RF MEMS infrared detector applications.Electronics 2019, 8, 974 2 of 12 planar interconnect packaging [6][7][8][9][10][11]. There are two primary types of wafer-level 3D packaging. One is film encapsulation, which utilizes an epitaxial highly doped silicon film to seal devices and vertical silicon feedthroughs to transmit electrical signals [6,7]. Although the film encapsulation can contribute to the miniaturization of devices, its micro-fabrication process is very complicated. Another type is typically based on through-silicon vias (TSVs) and wafer-level bonding [8][9][10][11]. This technique utilizes TSVs to make vertical interconnections, which embed the vertical metal feedthroughs and SiO 2 films in bulk silicon to transmit electrical signals and act as the insulation, respectively. However, this technique has some shortcomings including mismatched thermal expansion coefficients (TECs) between the metal and silicon, large dielectric loss, insulation failure, a complex process, and high cost [9]. In addition, the wafer-level bonding between the cap and device wafers is critical to achieve long-term operation as well as high thermal insulation for RF MEMS infrared detectors. The common bonding methods such as Cu-Sn bonding and Au-Sn bonding [11,12] are not cost-effective and easily cause large residue stress in the systems. The silicon wafer with inserted Pyrex glass is a promising 3D packaging structure, which utilizes vertical silicon feedthroughs to transmit electrical signals [13][14][15]. The inserted Pyrex glass acts as the electrical insulation and the anodic bonding material, which also has a matched TEC wi...

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Filtering characteristics of a graphene ribbon with a rectangle ring in infrared region

Cited by 6 publications

References 23 publications

Graphene-based ultra-wideband absorber for terahertz applications using hexagonal split ring resonators

Graphene-based ultra-wideband absorber for terahertz applications using hexagonal split ring resonators

Mode Conversion of the Edge Modes in the Graphene Double-Ribbon Bend

A Novel 3D Encapsulation Structure Based on Subwavelength Structure and Inserted Pyrex Glass for RF MEMS Infrared Detectors

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