Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Tachikawa, M.; Yamaguchi, Masafumi

doi:10.1063/1.102773

Cited by 99 publications

(53 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such dislocation density is in agreement with Tachikawa and Yamaguchi results. 33 Nevertheless, this value is still high and must be reduced in the future. Several methods are possible to decrease the threading dislocation density down to 10 5 -10 6 cm −2 : Thermal Cycling Annealing (TCA) of the layer, 2,8 Ge/SiGe buffer layer, 13 ART, 10-12 superlattices, 2 InAs quantum dots insertion in the layer.…”

Section: -2mentioning

confidence: 99%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

View full text Add to dashboard Cite

Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

show abstract

Section: -2mentioning

confidence: 99%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The origin of high TD densities is not fully understood-there is currently no model that can predict the TD density in any materials system -but it is known to be correlated with the three dimensional islands that form in the very first stages of growth [6]. It is also known that the TD density decreases with increasing layer thickness [3,4,7], but unfortunately the amount of material required to obtain a technologically viable TD density ρ TD <10 5 cm −2 is much larger than the critical thickness for cracking. There is no process window.…”

Section: Introductionmentioning

confidence: 99%

“…Apart from simply growing thick epitaxial layers [4,7], it is possible to reduce TD densities more efficiently by design. In particular, thin strained layers have been used to encourage TDs to move, interact and annihilate for some time [8,9], and have become known as dislocation filter layers (DFLs).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dislocation filters in GaAs on Si

George

Becagli

Liu

et al. 2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Cross section transmission electron microscopy has been used to analyse dislocation filter layers (DFLs) in five similar structures of GaAs on Si that had different amounts of strain in the DFLs or different annealing regimes. By counting threading dislocation (TD) numbers through the structure we are able to measure relative changes, even though the absolute density is not known. The DFLs remove more than 90% of TDs in all samples. We find that the TD density in material without DFLs decays as the inverse of the square root of the layer thickness, and that DFLs at the top of the structure are considerably more efficient than those at the bottom. This indicates that the interaction radius, the distance that TDs must approach to meet and annihilate, is dependent upon the TD density.

show abstract

“…Tachikawa and Yamaguchi [2] observed a l/h dependence ofi2) d2m72yI;r GaAs &w on 37 subs&te, z&em k k de i$? !in thti&fless.…”

Section: Introductionmentioning

confidence: 99%

Annihilation Radii for Dislocations Intercepting a Free Surface with Application to Heteroepitaxial Thin Film Growth

et al. 1998

View full text Add to dashboard Cite

One critical issue in heteroepitaxial, lattice mismatched growth is the inevitable appearance of threading dislocations which reside in the relaxing film and degrade its semiconducting properties. It has been shown in previous work that threading dislocations interact with each other through a series of annihilation and fusion reactions to decrease their density as the film thickness increases and follow a l/h decay, where h is the film thickness. A characteristic reaction radius is associated with these interactions. In previous simulations, the reaction radius was taken to be a constant value estimated using a simple approximation based on infinite, parallel dislocation lines. Here, a continuum-based elasticity approach is taken to more accurately quantify the reaction radius by comparing the Peach-Koehler force of one dislocation acting on another at a free surface with the lattice resistance to dislocation motion. The presence of the free surface gives rise to a moderate reduction of the interaction force. Results are compared with preliminary experimental data for GaAs films grown on InP. INTRODUCTION AND BACKGROUND

show abstract

Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Abstract: Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strainedlayer superlattices Appl.

Cited by 99 publications

References 4 publications

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Dislocation filters in GaAs on Si

Annihilation Radii for Dislocations Intercepting a Free Surface with Application to Heteroepitaxial Thin Film Growth

Contact Info

Product

Resources

About