Film quantum yields of EUV and ultra-high PAG photoresists

Hassanein, Elsayed; Higgins, Craig; Naulleau, Patrick; Matyi, R. J.; Gallatin, Gregg M.; Denbeaux, Gregory; Antohe, Alin; Thackeray, Jim; Spear, Kathleen; Szmanda, Charles R.; Anderson, Christopher N.; Niakoula, Dimitra; Malloy, Matthew; Khurshid, Anwar; Montgomery, Cecilia; Piscani, Emil C.; Rudack, Andrew C.; Byers, Jeff M.; Ma, Anna; Dean, Kim; Brainard, Robert L.

doi:10.1117/12.774099

Cited by 20 publications

(12 citation statements)

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“…Recent results by Thackeray et al show that the EUV sensitivity is proportional to the reduction potential of PAGs, which is consistent with Mechanism 1 [31]. This mechanism is also consistent with the experimental results shown in section 2.1 in which increased PAG loading produces an increase in FQY (Figure 2) [3,4,6,8,30].…”

Section: Mechanismsupporting

confidence: 84%

“…A comparison between the modeling results above with the results obtained by Higgins [3,4,6] and Kozawa [8,30] in their FQY studies reveals a clear discrepancy if acid generation only occurs through Mechanisms 1 and 2. For both, only ionization events initiate the formation of acid, necessitating a one-to-one correspondence between the number of secondary electrons produced through inelastic scattering and the number of acid molecules generated.…”

Section: Mechanisms and Fqy Overviewmentioning

confidence: 54%

“…Two complementary studies provide important information about the role of secondary electrons in converting PAGs to acid ( Figure 2) [4,6,8,30]. In both studies, the film quantum yields of acid generation were determined as a function of PAG loading.…”

Section: Two Studies Of Film Quantum Yieldmentioning

confidence: 99%

“…For most hydrocarbons, binding energies are about 6-14 eV. Therefore, the EUV photons will generate photoelectrons with kinetic energies in the range of 78-86 eV [4]. Electrons within this energy range can interact with molecules in the photoresist by one of five main processes: elastic scattering, ionization, plasmon generation, internal excitation, or vibrational excitation ( Figure 5) [28,29,[33][34][35].…”

Section: Energy Loss Mechanismsmentioning

confidence: 99%

“…As an EUV photon (92 eV) is absorbed, it creates a photoelectron with a kinetic energy of approximately 78-86 eV [3][4][5]. As it scatters throughout the polymer matrix, this electron loses energy through several different mechanisms (see Section 3.1 below), one of which is the initiation of further ionization events.…”

Section: Introductionmentioning

confidence: 99%

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Secondary Electrons in EUV Lithography

Torok

Herbol

et al. 2013

J. Photopol. Sci. Technol.

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Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUVinduced acid generation is therefore needed for the development of higher performance resists.

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