Positive molecular resists

Argitis, Panagiotis; Vidali, Veroniki P.; Niakoula, Dimitra

doi:10.1016/b978-0-08-100354-1.00009-0

Cited by 1 publication

(1 citation statement)

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“…Molecular type resists have attracted much attention for years since the small size of basic matrix material and its well-defined molecular structure are expected to be beneficial to better resolution and lower LWR. Past developments in the field of positive molecular resists including EUV materials had been reviewed in 2016 [71]. Currently, material's robustness is often discussed like Tg, modulus, and adhesion to substrate along with efforts for high sensitivity.…”

Section: Molecular Chemically Amplified Systemsmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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Section: Molecular Chemically Amplified Systemsmentioning

confidence: 99%