Film growth of Ge1−Mn Te using ionized-cluster beam technique

The Role of Frustration in Magnetism of Ge1-xCrxTe Semimagnetic Semiconductor

“…Chen et al [1], Fukuma et al [2], and Knoff et al [3] investigated thin films of Ge 1−x Mn x Te and reported their ferromagnetic properties. Ge 1−x Mn x Te is a promising candidate for being the first SMSs capable of being utilized for magnetic recording at room temperature due to large Curie temperatures as high as 200 K reported in this material [4,5].…”

Electronic structure and x-ray magnetic circular dichroism in (Ge,Mn)Te diluted magnetic semiconductors

“…Recently, Fukuma et al have succeeded in the epitaxial growth of (Ge 1−x Mn x )Te ferromagnetic films up to x = 0.96 using an ionized cluster beam (ICB) technique [4]. Curie temperature T C takes a maximum of 140 K at x = 0.51 and the ferromagnetic order exists in the whole region of x 0.96, though MnTe with x = 1 limit is an antiferromagnetic compound.…”

First-Principles Study of the Structural, Electronic, Magnetic and Thermal Properties of the Cr Doped Ge6Mn2Te8 and Ge6Fe2Te8 Systems

“…Ferromagnetic order was observed for the Cr, Mn, and Fe doped films, where the Ti, V, Co, and Ni doped films were found to be paramagnetic [7]. The Curie temperatures T C of these thin films have been found to depend on the type and concentration of the dopants with a high value of 140 K, reported for the Ge 1−x Mn x Te alloys at x = 0.51 [6]. Later on this group of researchers reported even higher value of T C ≈ 190 K in the DMS Ge 0.92 Mn 0.08 Te [8] alloy where T C 's around 200 K to 250 K have been reported by Fukuma et al [9].…”

“…Recently, GeTe thin films doped with the 3d transition metals have received considerable attention from experimentalists interested in the field of magnetic semiconductors [5,6]. Ferromagnetic order was observed for the Cr, Mn, and Fe doped films, where the Ti, V, Co, and Ni doped films were found to be paramagnetic [7].…”