Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

Mähne, Hannes; Berger, Lutz‐Michael; Martin, D.; Klemm, Volker; Slesazeck, Stefan; Jakschik, S.; Rafaja, David; Mikolajick, Thomas

doi:10.1016/j.sse.2012.01.005

Cited by 47 publications

(30 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, niobium oxides are very attractive for energy storage applications due to their intercalation pseudocapacitance [3,4]. In addition, niobium oxides can be used as selectors or data storage elements in future nonvolatile memory applications [5,6]. The most thermodynamically stable niobium oxide is niobium pentoxide (Nb 2 O 5 ) [1,2].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of T-Nb2O5 on SrTiO3

et al. 2018

View full text Add to dashboard Cite

There is a growing interest in exploiting the functional properties of niobium oxides in general and of the T-Nb2O5 polymorph in particular. Fundamental investigations of the properties of niobium oxides are, however, hindered by the availability of materials with sufficient structural perfection. It is expected that high-quality T-Nb2O5 can be made using heteroepitaxial growth. Here, we investigated the epitaxial growth of T-Nb2O5 on a prototype perovskite oxide, SrTiO3. Even though there exists a reasonable lattice mismatch in one crystallographic direction, these materials have a significant difference in crystal structure: SrTiO3 is cubic, whereas T-Nb2O5 is orthorhombic. It is found that this difference in symmetry results in the formation of domains that have the T-Nb2O5 c-axis aligned with the SrTiO3 <001>s in-plane directions. Hence, the number of domain orientations is four and two for the growth on (100)s- and (110)s-oriented substrates, respectively. Interestingly, the out-of-plane growth direction remains the same for both substrate orientations, suggesting a weak interfacial coupling between the two materials. Despite challenges associated with the heteroepitaxial growth of T-Nb2O5, the T-Nb2O5 films presented in this paper are a significant improvement in terms of structural quality compared to their polycrystalline counterparts.

show abstract

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of T-Nb2O5 on SrTiO3

et al. 2018

View full text Add to dashboard Cite

show abstract

“…It is known that Nb forms different stable oxides such NbO, NbO 2 and Nb 2 O 5 , that exhibit very distinct electrical properties: NbO presents a typical metallic behaviour, Nb 2 O 5 is a wide band gap semiconductor (3.4-5.3 eV), and Nb 12 O 29 (which has a stoichiometry very close to Nb 2 O 5 ) can be a good transparent conductive oxide (TCO) [1][2][3][4][5]. More recently, niobium oxides have been explored for the development of resistive memories due to their resistive switching mechanisms based on the presence of oxygen vacancies [6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…For instance, this approach was used by Cava et al by doping Ta 2 O 3 with different ions, such as Al 3 þ [15], Zr 4 þ [16], Ti 4 þ [17], Si 4 þ [18] and B 3 þ [19]. Additionally, the Ta 2 O 5 doping with small amounts of TiO 2 has proven to enhance the dielectric constant of Ta 2 O 5 [7,10,11]. On the other hand, the use of Al 2 O 3 [15] as a doping agent does not lead to higher dielectric constant, but the temperature coefficient of dielectric constant (TCK) can be successfully decreased, which is an important requirement to most applications on microelectronic technology.…”

Section: Introductionmentioning

confidence: 99%

Effects of Zr and Ga doping on the stoichiometry and properties of niobium oxides

Nico

Soares

Costa

et al. 2016

Ceramics International

View full text Add to dashboard Cite

“…The most important tool for a circuit designer is the availability of a reliable [4] memristor model [5,6] capable to reproduce the nonlinear dynamics of the device [7] with sufficient accuracy and for a broad range of initial conditions and input signals [8]. At NaMLab we have direct access to the fabrication process and electrical characterization of a N bO x /N b 2 O 5 [9] microscale memristor of the kind mentioned above [2]. Our aim is to develop a simple [10] yet accurate mathematical model [11] of our memristor so as to use it for design purposes [12].…”

Section: Introductionmentioning

confidence: 99%

Unfolding the Threshold Switching Behavior of a Memristor

Slesazeck

Ascoli

Mähne

et al. 2014

Nonlinear Dynamics of Electronic Systems

View full text Add to dashboard Cite

Abstract. Employing a mathematical model based upon Chua's unfolding theorem, some aspects of the nonlinear dynamics of a thermallyactivated micro-scale NbOx/N b2O5 volatile memristor were modeled. Insights into the peculiar behavior of the device are gained through experiments and model-based simulations. Particularly, this enables us to reproduce its threshold switching behavior under quasi-static excitation, and to explain under which conditions the off-to-on switching is accompanied by the appearance of a negative differential resistance region on its current-voltage characteristic.

show abstract

Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films

Cited by 47 publications

References 14 publications

Heteroepitaxial Growth of T-Nb2O5 on SrTiO3

Heteroepitaxial Growth of T-Nb2O5 on SrTiO3

Effects of Zr and Ga doping on the stoichiometry and properties of niobium oxides

Unfolding the Threshold Switching Behavior of a Memristor

Contact Info

Product

Resources

About