Figure of merit for narrowband, wideband and multiband LNAs

Ramzan, Rashad; Zafar, Faiza; Arshad, Sana; Wahab, Q.

doi:10.1080/00207217.2012.692635

Cited by 17 publications

(6 citation statements)

References 13 publications

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“…It amplifies the amplitude of the weak signal at its input to a more reasonable output signal with minimum self-generated additional noise. The performance metrics of the LNA are its gain, , noise figure, NF, and power consumption, P [72,73]. Generally, the LNAs should have higher and lower NF [2,25].…”

Section: Low-noise Amplifiermentioning

confidence: 99%

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Section: Low-noise Amplifiermentioning

confidence: 99%

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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“…In Table 1, we summarize the performance of the proposed LNPA comparing to other previously reported LNAs at millimetre‐wave frequencies. Two different figure of merits (FoM) were introduced in [24] for narrowband LNAs and shown in (4) and (5).

FoM - 1 = \frac{G a i n (abs)}{false(N F - 1 false) (abs) \cdot P_{DC} (mW)}

FoM - 2 = \frac{G a i n (abs) \cdot I I P 3 (mW) \cdot f_{C} false(normalGHz false)}{false(N F - 1 false) (abs) \cdot P_{DC} (mW)}

Since the major focus of the proposed LNPA design is combining both low‐noise and power applications, larger power consumption is expected at the power stage, leading to poor FoM‐1.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

Compact low‐noise power amplifier design and implementation for millimetre wave frequencies

Tsao

Lin

et al. 2020

IET Circuits, Devices & Systems

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“…The FoM is calculated to determine the performance of different LNAs (22, 23). Since LNAs of different technology nodes are taken for the comparison, S 11 is used to get normalised FoM [38]. The relation between

Z_{in}^{N}

and S 11 are shown in (24).…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

Roobert¹,

Rani²,

Rajaram³

2019

IET Circuits, Devices & Systems

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This study deals with the design and optimisation of two-stage complementary metal oxide semiconductor low noise amplifier (LNA) for wireless local area network (WLAN) applications. IEEE 802.11n WLAN standard provides up to 600 Mbps speed with 40 MHz channel bandwidth and high throughput. The receiver of these WLAN applications requires LNA with higher gain and minimum noise figure (NF). Elephant Herding Optimisation technique was involved for the first time to optimise the performance of the LNA. The post-layout simulation shows that a maximum gain of 26.7 dB at 2.4 GHz is achieved in the proposed design. Feedforward noise cancelation technique is involved to get a reduced NF of 1.12 dB. The first and second stages are tuned to cover the 3 dB maximum gain bandwidth of 3.2 GHz (from 1.7 to 4.4 GHz). This LNA is designed at 90 nm technology with the supply voltage of 0.5 and 1.2 V, and consumes 8.9 mW of power. Current reuse technology is used to reduce power consumption. The input and output return losses have been found to be −18 and −15 dB, respectively at the targeted 2.4 GHz frequency. Third-order input intercept point of the optimised LNA is −8.1 dBm.

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Figure of merit for narrowband, wideband and multiband LNAs

Cited by 17 publications

References 13 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Compact low‐noise power amplifier design and implementation for millimetre wave frequencies

Design and optimisation of feedforward noise cancelling complementary metal oxide semiconductor LNA for 2.4 GHz WLAN applications

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