Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.
Asphaltene is a component of crude oil that has remained relatively unexplored for organic electronic applications. In this study, we report on its extraction technique from crude oil tank bottom sludge (COTBS) and its thin-film characteristics when 1-ethyl-3-methylimidazolium chloride ([EMIM]Cl) ionic liquid (IL) was introduced as dopants. The extraction technique yielded asphaltene with more than 80% carbon content. The IL resulted in asphaltene thin films with a typical root-mean-square surface roughness of 4 nm, suitable for organic electronic applications. The thin films each showed an optical band gap of 3.8 eV and a sheet resistance as low as 105 Ω/□. When the film was used as a conductive layer in organic field-effect transistors (OFET), it exhibited hole and electron conduction with hole (µh) and electron (µe) mobilities in the order of 10−8 and 10−6 cm2/Vs, respectively. These characteristics are just preliminary in nature. With the right IL, asphaltene thin films may become a good alternative for a transport layer in organic electronic applications.
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