Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model

Norhakim, Nadia; Burhanudin, Zainal Arif

doi:10.1109/sensorsnano44414.2019.8940096

Cited by 2 publications

(1 citation statement)

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“…[3]- [8]) to enable detection of target factors with a much higher accuracy than in the currently used commercial devices. In graphenebased sensor applications the external physical, chemical or biological factor introduces additional charge to the system, what results in the shift of current-voltage (I − V ) transfer characteristics [9], [10]. In Fig.…”

Section: Introductionmentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Łuszczek

Turzyński

Świsulski

2020

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The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a "black box" with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors' model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.

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