Field-induced resistive switching based on space-charge-limited current

Abstract

Polycrystalline (Ba,Sr)(Zr,Ti)O3 thin films sandwiched between two Pt electrodes have been revealed to exhibit hysteretic current-voltage (I-V) characteristics and resistive switching at room temperature. High- and low-resistance states, as well as a less abrupt state transition, occur during the voltage cycle. The maximum ratio between these two resistance states is about 230. Analyses of I-V behaviors have been executed, and it is proposed that space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers is responsible for such transition of resistance states.

Interface effects in spin-polarized metal/insulator layered structures

“…18. Other ferroelectric tunnel junction devices, using inorganic ferroelectric barrier layers, also show hysteresis but the hysteresis for the P(VDF-TrFE) -CuPc heterojunction device is reversed from some [81,330,334,335], but not all [336], inorganic ferroelectric barrier layers reported elsewhere. The hysteretic current-voltage (I-V) characteristics may differ from the P(VDF-TrFE) -CuPc heterojunction device shown here because of space-charge-limitedcurrent conduction with the inorganic ferroelectric barrier layers [334].…”

Different approaches to adjusting band offsets at intermolecular interfaces

“…Expectations on what should be the behavior of a ferroelectric tunnel junction barrier, based on the Brickman model [46], have been much discussed [47][48][49][50], and these expectations are borne out in the P(VDF-TrFE)-CuPc heterojunction device, as indicated in Figure 6. Other ferroelectric tunnel junction devices, using inorganic ferroelectric barrier layers, also show hysteresis but the hysteresis for the P(VDF-TrFE)-CuPc heterojunction device is reversed from some [47,48,51,52], but not all [53] inorganic ferroelectric barrier layers reported elsewhere. The hysteretic current-voltage (I-V) characteristics may differ from the P(VDF-TrFE)-CuPc heterojunction device shown here because of space-charge-limited-current conduction with the inorganic ferroelectric barrier layers [51].…”

“…Other ferroelectric tunnel junction devices, using inorganic ferroelectric barrier layers, also show hysteresis but the hysteresis for the P(VDF-TrFE)-CuPc heterojunction device is reversed from some [47,48,51,52], but not all [53] inorganic ferroelectric barrier layers reported elsewhere. The hysteretic current-voltage (I-V) characteristics may differ from the P(VDF-TrFE)-CuPc heterojunction device shown here because of space-charge-limited-current conduction with the inorganic ferroelectric barrier layers [51].…”

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

“…One of these models is space-charge-limited conduction ͑SCLC͒ theory, which has been employed to understand RS in various materials. [2][3][4][5][6] Essentially, SCLC is based on the bulk-limited process in which the current flow is governed by the bulk properties of the material. 7 However, a few papers have reported trap-controlled SCLC behavior originates from localized traps in the metal/oxide interface region.…”