2017
DOI: 10.1002/adfm.201702211
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Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Abstract: Black phosphorus (BP) has been considered as a promising two-dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole-transport-dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong fieldinduced effect from the K + center of the silicon nitride (Si x N y ). An obvi… Show more

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Cited by 103 publications
(69 citation statements)
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References 31 publications
(32 reference statements)
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“…BP was synthesized by an improved mineralizer-assisted chemical vapor transport method using tin tetraiodide, tin, and red phosphorus as source materials according to a previous report [39]. The bulk MoS 2 crystal was purchased from Six Carbon Technology.…”
Section: Methodsmentioning
confidence: 99%
“…BP was synthesized by an improved mineralizer-assisted chemical vapor transport method using tin tetraiodide, tin, and red phosphorus as source materials according to a previous report [39]. The bulk MoS 2 crystal was purchased from Six Carbon Technology.…”
Section: Methodsmentioning
confidence: 99%
“…Black phosphorus is another commonly used 2D crystal for efficient CMOS inverters as a result of its superior electrical properties such as extremely large hole mobility of 1000 cm 2 V −1 s −1 and good on/off current ratio of 10 5 . Recently, Koenig et al investigated the influence of Cu adatoms on BP and found that the introduced Cu adatoms could make BP exhibit n‐type carrier conduction (electron mobility: 2140 cm 2 V −1 s −1 under relatively low temperature) without lowering original charge transport characteristics .…”
Section: Functional Applications Of Ambipolar Transistorsmentioning
confidence: 99%
“…Next, non-metallic doping will be discussed in detail. Non-metallic elements and some oxides/nitrides have been introduced as dopants [54,52,55,61,62]. The transfer curves of transistors with 0.5 and 10 nm of cesium carbonate (Cs 2 CO 3 ) compared to the pristine BP are displayed in Fig.…”
Section: Functionalization and Dopingmentioning
confidence: 99%