Field-induced evolution of metallic nano-tips in indium tin oxide-tris-(8-hydroxyquinoline) aluminum-aluminum device

You, YinTao; Zeng, Quan; Yao, Yao; Wang, M. L.; Wu, Bin; He, Yabai; Hu, Y. M.; Wu, Chenming; Hou, Xiaoyuan

doi:10.1063/1.3697829

Cited by 14 publications

(6 citation statements)

References 25 publications

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“…The corresponding AFM images of Al TE deposited on planar PVK can be seen in Figure S5 (Supporting Information) for comparison. Due to the large curvature of cone, the tip‐enhanced local electric fields (δ 2 , Figure e) will facilitate the ionization of Al atoms at the tip region, and accelerate the migration of Al 3+ with lower switching threshold voltage . Therefore, the orientation of CFs is enhanced during reduplicate SET processes, which is advantageous to narrow the distribution of SET voltage.…”

Section: The Comparison Of the Rs Performances For The Planar And Por...mentioning

confidence: 99%

Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

et al. 2017

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Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect.

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Section: The Comparison Of the Rs Performances For The Planar And Por...mentioning

confidence: 99%

Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

et al. 2017

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“…Moreover, the field driven migration of metal nanoclusters in dielectrics has been recently discussed in details [33]. Filament formation may be driven by electrochemical migration of metal cations in the insulating layer [34,35], the migration of anions inducing a stoichiometry (or valence) change [36], the change of stoichiometry by thermochemical reactions caused by the local temperature increase or by field assisted sputtering from pre-formed point-like geometries [37]. Previous studies on the diffusion of evaporated metals on organic layers have evidenced kinetic/thermal mediated diffusion, and preferential diffusion at surface defects [38,39].…”

Section: Introductionmentioning

confidence: 99%

3D imaging of filaments in organic resistive memory devices

Busby

Crespo‐Monteiro

Gîrleanu

et al. 2015

Organic Electronics

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“…In order to verify this statement, we reported very recently an experiment on electric field and temperature dependence of switching time of the devices from OFF to ON state. 13 The conclusion there figured out the very possibility that metallic tips at the interface matter in the memory effect.…”

mentioning

confidence: 99%

“…That means, the memory effect is shown to correspond to the interfacial potential reduction, which is consistent with our previous experimental results. 13 On the other hand, the NDR effect has also been rebuilt by the theory, which is of importance in this type of memory device as we have mentioned.…”

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confidence: 99%

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Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission, and oxygen adsorbing

Yao

You

et al. 2012

Appl. Phys. Lett.

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We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic island array embedding within two electrodes. We use scattering operator method to evaluate the tunneling current among the electrode and islands to establish the basic bistable I-V curves for several devices. The theoretical results match the experiments very well, and both memory and NDR effect could be understood comprehensively. The experimental correspondence, say, the experiment of changing the pressure of oxygen, is addressed as well.PACS numbers: 73.40.Gk Memory devices based on metal-insulator-metal resistive structure with organic materials are promising in application.1 The underlying mechanism in these devices is not very clear up to now due to the complicated phenomena observed, say for example, the memory effect and the negative differential resistance (NDR) in ON state, making an obstacle for controllable improvement of the performance.2,3 Two different but correlated mechanisms have been addressed. The first one is the SimmonsVerderber (SV) model based on the space charge accumulated on some penetrated metallic islands.4 This model could be proposed to explain NDR, which is also closely related to the memory effect.2 In addition to it, electron tunneling and Coulomb blockade were also proposed, 3 indicating that the different spatial distribution of the space charge gave rise to the transition between ON and OFF state. The admittance spectroscopy provided another evidence to the SV model.5 Whereas, the basic drawback of this mechanism is that, the OFF state is always observed, in practice, during the first scanning of bias voltage, while SV model predicts the sample is initially in ON state.6 The second mechanism is the filamentary conduction, stating that there would be some penetration of metal atoms into organic layer during the deposition of top electrode, which forms some conducting filaments under relative large bias voltage, and the trap-controlled tunneling between different filaments dominates the NDR effect.7,8 The direct experimental evidence for this mechanism is from the transmission electron microscopy image, which shows the metallic filaments are formed in ON state.9 Meanwhile, the temperature insensitivity of ON state current, 10 the time dependent switch-on behavior, 11-13 and the scanning voltage and conductance dependence 14 all go together to support the filamentary mechanism. However, it is still hard to imagine the destruction and recovery of an atomic filament could respond so fast to the scanning voltage. Combining the above two mechanisms, we can get a common idea that, during the deposition of the electrode, the metallic atoms could go deeply into the organic layer and form some islands in the film, 3,15 which is crucial to the NDR effect no matter it originates from space charge or filaments.Another experiments were focusing on the ro...

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Field-induced evolution of metallic nano-tips in indium tin oxide-tris-(8-hydroxyquinoline) aluminum-aluminum device

Cited by 14 publications

References 25 publications

Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

3D imaging of filaments in organic resistive memory devices

Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission, and oxygen adsorbing

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