3D imaging of filaments in organic resistive memory devices

Busby, Yan; Crespo‐Monteiro, Nicolas; Gîrleanu, Maria; Brinkmann, Martin; Ersen, Ovidiu; Pireaux, Jean Jacques

doi:10.1016/j.orgel.2014.10.039

Cited by 25 publications

(15 citation statements)

References 47 publications

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“…However, more detailed mechanism analysis are required, since there can be a possibility that indium on ITO electrode can migrate through polymer layer, which can resulted in electrical properties of device under ambient condition having humidity from the air that can enhance the indium ion migration. [17] Fig. 3(b) does not show the so-called forming step unlike other organic devices before the devices can be switched reversibly [1][2][3].…”

Section: Resultsmentioning

confidence: 92%

Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Kim

Jung

Kim

et al. 2015

Microelectronic Engineering

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Section: Resultsmentioning

confidence: 92%

Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Kim

Jung

Kim

et al. 2015

Microelectronic Engineering

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“…In particular, 3D imaging with time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) was performed to further investigate the switching mechanism by depth‐profiling devices made with the different inks. ToF‐SIMS has been recently proved to be a powerful tool for studying hybrid memory elements thanks to the outstanding capability to provide molecular information combining a very high sensitivity, a 3D imaging with an in‐depth resolution of 1 nm and a lateral resolution of about 1 µm . In this work, ToF‐SIMS was performed on electrically cycled memory devices by using a low energy (500 eV) Cs + sputtering beam and Bi 3 + analysis beam over a variable analysis area defined over the crossing region between Ag (top) and ITO (bottom) electrode bars.…”

Section: Resultsmentioning

confidence: 99%

Printed Nonvolatile Resistive Memories Based on a Hybrid Organic/Inorganic Functional Ink

Casula

Tkacz‐Szczesna

Busby

et al. 2017

Adv Materials Technologies

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Organic memories are increasingly being considered as promising candidates for a number of novel consumer applications, such as smart labels and smart packaging devices. Indeed, organic memories can be fabricated on highly flexible substrates at low temperatures from liquid phase, employing for instance printing techniques. In this work, a nonvolatile resistive memory element conceived for large‐area processing and operation in ambient conditions is presented. In particular, a functional ink made out of an air stable organic semiconductor, namely ActivInk N1400, and gold nanoparticles (NPs) is developed and optimized for the fabrication of high performance memories through inkjet printing. The ink formulation is varied in order to explore the influence of Au NPs concentration on the switching behavior. Devices are operated in ambient conditions with reproducible memory behavior, high ON/OFF current ratios, and low programming voltages. In depth material analysis with time‐of‐flight secondary ion mass spectrometry and X‐ray photoelectron spectroscopy depth profiles are carried out on operated devices to shine a light on resistive switching mechanism and to determine the average gold content and its 3D distribution in stable memories.

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“…[ 14,19 ] On the other hand, polymers with the typical donor–acceptor (D–A) type can adjust their microstructure to boost inner ion migration, [ 21–24 ] which plays an important role in the formation of conductive filaments of memristive devices. It has been reported that metal‐containing polymers [ 25–34 ] actually belong to a new kind of D–A polymers. [ 35–40 ] Nevertheless, the explorations of using novel D–A type metal‐containing polymers in memristors are extremely rare.…”

Section: Introductionmentioning

confidence: 99%

Donor–Acceptor Metallopolymers Containing Ferrocene for Brain Inspired Memristive Devices

Xiang

et al. 2020

Adv Elect Materials

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massive data. Memristive devices (i.e., memristors) have a huge potential for developing novel highly efficient braininspired computing system, [1-7] which is considered as a promising candidate to replace the present computing system. Memristor exhibits excellent properties, e.g., simple structure, [8] multiple resistance states, [9] fast switching speed, [10] and good scalability, [11] which are very beneficial as the building block of future braininspired systems. Physical mechanism of memristor has been widely studied and the resistance change is mainly attributed to the formation and dissolution of filaments in the resistance-switching layer between two metal electrodes. [12] Recently, organic polymer materials as the resistance-switching layers of memristive devices have been reported, [13-16] with excellent memory properties of large switching ratio, [17] low operating voltage, [18] low cost, [19] and mechanical flexibility. [20] However, the organic memristive devices usually encounter rigorous issues of low stability due to the uncertain redox properties within organic polymer materials. [14,19] On the other hand, polymers with the typical donor-acceptor (D-A) type can adjust their microstructure to boost inner ion migration, [21-24] which plays an important role in the formation of conductive filaments of memristive devices. It has been reported that metal-containing polymers [25-34] actually belong To realize brain-inspired devices and systems, memristor is one of the significant alternatives in breaking through the infrastructure restrictions of present logic and memory devices. Organic materials have become popular to fabricate memristive devices due to their unique properties of low cost, mechanical flexibility, and compatibility with complementary metal-oxidesemiconductor technology. Metallopolymer is a new kind of promising organic materials functioning as the resistive-switching layers of memristive devices due to the unique donor-acceptor type structure, which performs good ability of tuning electron concentration to boost the migration of inner ions. Herein, a new metallopolymer MP1 containing ferrocene and triphenylamine is designed and synthesized, which is utilized as a resistiveswitching layer of memristor with active and inert electrodes of Ag and Pt, respectively. Process flow of devices is fully developed and MP1 is found to act as metal-ions-accommodation site with the great potential to boost the formation of conductive filaments in the active region. More interestingly, the conductance of Ag/MP1/Pt memristor can be modulated under various voltage pulses exhibiting distinguished electrical properties. Additionally, synaptic functions are successfully emulated using such MP1-based memristors. This work will greatly expand the further development of organic memristors for flexible brain-inspired systems.

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3D imaging of filaments in organic resistive memory devices

Cited by 25 publications

References 47 publications

Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Printed Nonvolatile Resistive Memories Based on a Hybrid Organic/Inorganic Functional Ink

Donor–Acceptor Metallopolymers Containing Ferrocene for Brain Inspired Memristive Devices

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