Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

McPherson, J. W.; Reddy, V.; Mogul, H. C.

doi:10.1063/1.119739

Cited by 64 publications

(30 citation statements)

References 2 publications

(1 reference statement)

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“…Threshold voltage shifts due to oxide and interface trap charge were less than 100 mV, even at the highest doses, showing that, as expected, there is little net charge trapping in these thin oxides [22], [23]. However, it is nearly certain that higher densities are present of neutral defects [9] and/or dipole charge [24]; these types of defects are often thought to make oxides more susceptible to dielectric breakdown [16], [25]. Nevertheless, Fig.…”

Section: B Breakdown Of Irradiated Capacitorsmentioning

confidence: 75%

Dielectric breakdown of thin oxides during ramped current-temperature stress

Fleetwood¹,

Riewe²,

Winokur³

et al. 2000

IEEE Trans. Nucl. Sci.

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Dielectric breakdown in thin gate oxides is studied with a bias-temperature ramp technique. Research grade 6.5 nm oxides with Al gates show variable current-temperature ( -) response with increasing electric field, consistent with a wide breakdown distribution at room temperature. Industrial grade 7.0 nm thermal and N 2 O-nitrided oxides show well-behaved -plots, consistent with narrower breakdown distributions at room temperature. In all cases, temperature-to-breakdown decreases with increasing electric field. Charge-to-breakdown levels at elevated temperatures exceed values observed in previous work, especially for the 7 nm nitrided oxides. No significant effect of radiation exposure on high-field oxide conduction or breakdown is observed under positive, zero, or negative radiation bias for the thermal and nitrided oxides, up to 20 Mrad(SiO 2 ). Detectable radiation induced leakage current is observed only for heavy-ion equivalent doses greater than 10 Mrad(SiO 2 ). These results suggest that the long-term reliability of high quality gate oxides may not be significantly degraded by radiation exposure at levels typical of system operation.

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Section: B Breakdown Of Irradiated Capacitorsmentioning

confidence: 75%

Dielectric breakdown of thin oxides during ramped current-temperature stress

Fleetwood¹,

Riewe²,

Winokur³

et al. 2000

IEEE Trans. Nucl. Sci.

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“…Taking i = 38 and E i = 1.6 eV (which are of the order of Si-Si binding energy [22,23]) one can obtain E D = 0.06-0.36 eV. This value is sufficiently lower than activation energy for the surface diffusion for adatoms at (1 × 1) [19,24] and vacancies for (7 × 7) [10] silicon surfaces.…”

Section: Resultsmentioning

confidence: 97%

Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures

2015

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“…Exponential dependence of trap generation rate on voltage can be explained by either a thermochemical reaction [16] or a voltage-driven process taking place in a dielectric [17], [18]. Similar mechanisms are perhaps responsible for trap generation in SiO and Si N .…”

Section: Discussionmentioning

confidence: 99%

Intrinsic reliability projections for a thin JVD silicon nitride gate dielectric in P-MOSFET

Polishchuk

Lü

Yeo

et al. 2001

IEEE Trans. Device Mater. Relib.

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Abstract-A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si 3 N 4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each of these parameters as a function of stress time and stress voltage is studied. The data are used to project the drift of a MOSFET incorporating JVD nitride at a low operating voltage of 1.2 V in 10 years. Based on these projections, we conclude that the increase in the Si 3 N 4 gate dielectric leakage current does not pose a serious threat to device performance. Instead, the degradation in the threshold voltage and channel mobility can become the factor limiting the device reliability.Index Terms-Dielectric wearout, JVD silicon nitride, lifetime projections, stress-induced leakage current, trap generation.

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Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

Abstract: Articles you may be interested inDetermination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data

Cited by 64 publications

References 2 publications

Dielectric breakdown of thin oxides during ramped current-temperature stress

Dielectric breakdown of thin oxides during ramped current-temperature stress

Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures

Intrinsic reliability projections for a thin JVD silicon nitride gate dielectric in P-MOSFET

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