Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation

Shih, Ching‐Long; Chen, N. C.; Chang, Pei‐Hung; Liu, K.S.

doi:10.1016/j.jcrysgro.2005.04.065

Cited by 10 publications

(4 citation statements)

References 27 publications

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“…Controlling the dimensions of any nanostructured material makes growth more challenging as compared to growth of a thin film. As expected for InN, reports on the growth and properties of InN one-dimensional (1D) materials are limited [18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Controlled synthesis of InN and related materials not only opens the opportunity for fundamental studies but also for new applications in future electronic and photonic devices.…”

Section: Introductionmentioning

confidence: 99%

Controlled synthesis of single-crystalline InN nanorods

et al. 2007

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Single-crystalline InN nanorods were successfully grown on c-Al 2 O 3 , GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal-organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth-etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid-vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios. S Supplementary data are available from stacks.

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Section: Introductionmentioning

confidence: 99%

Controlled synthesis of single-crystalline InN nanorods

et al. 2007

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“…InN nanotips and nano‐ or micropyramids are also interesting, particularly for use in vacuum microelectronic devices due to the inherently heavily doped nature of InN. In order to exploit these properties, many researchers have reported successes in fabricating InN nanotips and nanocolumns through various methods 12–15. However, these nanotips were often not unidirectional or were produced using complicated catalysts or patterned template techniques 12, 13, 15.…”

Section: Introductionmentioning

confidence: 99%

Growth of pattern‐free InN micropyramids by metalorganic chemical vapor deposition

Jamil

Zaidi

et al. 2010

Physica Status Solidi (a)

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We report on the growth of unidirectional InN micropyramids by using a simple pattern-free epitaxial technique. These pyramids were grown on a GaN layer deposited on sapphire via metalorganic chemical vapor deposition (MOCVD). The XRD full width at half maximum (FWHM) was observed to be as low as 0.168 for the InN (0002) v rocking curve which indicates very good crystal quality of these InN pyramids. The Photoluminescence (PL) emission of InN micropyramids is $0.78 eV. The dependency on growth conditions of pyramid density, facet stabilization, and pyramid structural quality have been evaluated and discussed.

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“…The use of the commonly reported values in other field emission applications appears undefined, however, and they are not exclusively quoted. Indeed, some acknowledge that there are no strict rules, with some groups opting to define their own metrics . Due to such arbitrary definitions and the apparent lack of consistency, it has proven, to date, prohibitively challenging to draw direct valid comparisons between differing materials and morphologies.…”

mentioning

confidence: 99%

“…Around 70% of the papers studied reported β , highlighting another inconsistency in the field. β is poorly defined, with some quoting it as the value of height ( h ) of the emitter over the radius of curvature ( r ) of the tip: (

h / r

), or some linearly scaled variation of this, with this scalar varying between 1 and 25 . Others, more commonly (as is the case for all the 1D materials studied herein, and over 50% for 2D and 3D) state a value of β calculated by extracting it from a selected gradient on their coarsely fitted Fowler–Nordheim data.…”

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confidence: 99%

High Performance Field Emitters

et al. 2016

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The field electron emission performance of bulk, 1D, and 2D nanomaterials is here empirically compared in the largest metal‐analysis of its type. No clear trends are noted between the turn‐on electric field and maximum current density as a function of emitter work function, while a more pronounced correlation with the emitters dimensionality is noted. The turn‐on field is found to be twice as large for bulk materials compared to 1D and 2D materials, empirically confirming the wider communities view that high aspect ratios, and highly perturbed surface morphologies allow for enhanced field electron emitters.

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Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation

Cited by 10 publications

References 27 publications

Controlled synthesis of single-crystalline InN nanorods

Controlled synthesis of single-crystalline InN nanorods

Growth of pattern‐free InN micropyramids by metalorganic chemical vapor deposition

High Performance Field Emitters

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