Field Emission of a Single In-Doped ZnO Nanowire

Huang, Yunhua; Zhang, Yue; Gu, Yousong; Bai, Xuedong; Qi, Junjie; Liao, Qingliang; Liu, Juan

doi:10.1021/jp0666030

Cited by 81 publications

(60 citation statements)

References 21 publications

(43 reference statements)

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“…[31] Doping creates additional energy levels within the bandgap of a semiconductor and thus reduces the effective f. ZnO nanostructures are usually doped with trivalent metal atoms such as Ga and Al in order to improve their FE characteristics. [32] Encouraged by these studies, we have investigated for the first time, the effect of anion doping on the FE characteristics of ZnO nanostructures. Our investigations establish that N doping in ZnO can improve an FE current up to an order of magnitude.…”

Section: Field-emission Propertiesmentioning

confidence: 99%

Solvothermal Synthesis, Cathodoluminescence, and Field‐Emission Properties of Pure and N‐Doped ZnO Nanobullets

Gautam

Panchakarla

Dierre

et al. 2008

Adv Funct Materials

153

100

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Homogenous crystallization in solution, in the absence of external influences, is expected to lead to growth that is symmetric at least in two opposite facets. Such was not the case when we attempted to synthesize ZnO nanostructures by employing a solvothermal technique. The reaction product, instead, consisted of bullet‐shaped tiny single crystals with an abrupt hexagonal base and a sharp tip. A careful analysis of the product and the intermediate states of the synthesis reveals that one of the reaction intermediates with sheet‐like morphology acts as a self‐sacrificing template and induces such unexpected and novel growth. The synthesis was further extended to dope the nanobullets with nitrogen as previous studies showed this can induce p‐type behavior in ZnO, which is technologically complementary to the naturally occurring n‐type ZnO. Herein, a soft‐chemical approach is used for the first time for this purpose, which is otherwise accomplished with high‐temperature techniques. Cathodoluminesce (CL) investigations reveal stable optical behavior within a pure nanobullet. On the other hand, the CL spectra derived from the surfaces and the cores of the doped samples are different, pointing at a N‐rich core. Finally, even though N‐doped ZnO is known to have high electrical conductivity, the study now demonstrates that the field‐emission properties of ZnO can also be greatly enhanced by means of N doping.

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Section: Field-emission Propertiesmentioning

confidence: 99%

Solvothermal Synthesis, Cathodoluminescence, and Field‐Emission Properties of Pure and N‐Doped ZnO Nanobullets

Gautam

Panchakarla

Dierre

et al. 2008

Adv Funct Materials

153

100

View full text Add to dashboard Cite

show abstract

“…Moreover, due to its superior conducting properties, ZnO has also been investigated as a transparent conducting and piezoelectric material for use as electrodes, catalysts and sensors [3][4][5]. Recently, various doped ZnO nanostructures with different elements have been achieved to improve the electrical, optical and magnetic properties [6][7][8][9]. It was reported that the Sn-doping induces an emission at blue wavelength region [10].…”

Section: Introductionmentioning

confidence: 99%

The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties

Chen

et al. 2009

Journal of Crystal Growth

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“…It has been found that doping impurities, especially group III elements, such as Al [4], Ga [5], In [6], can significantly enhance the electrical conductivity and influence the optical properties. In order to generate desirable electrical, optical, and catalytic properties, 1D ZnO nanostructures have been doped with selected elements.…”

Section: Introductionmentioning

confidence: 99%

Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Duan

Sun

et al. 2013

Nanoscale Res Lett

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Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.

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Field Emission of a Single In-Doped ZnO Nanowire

Cited by 81 publications

References 21 publications

Solvothermal Synthesis, Cathodoluminescence, and Field‐Emission Properties of Pure and N‐Doped ZnO Nanobullets

Solvothermal Synthesis, Cathodoluminescence, and Field‐Emission Properties of Pure and N‐Doped ZnO Nanobullets

The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties

Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

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