Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Duan, Huan‐Feng; He, Haiping; Sun, Luwei; Song, Shiyan; Ye, Zhizhen

doi:10.1186/1556-276x-8-493

Cited by 18 publications

(13 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A surface depletion region exists, and electron-hole separation occurs because of the formation of a built-in electrical field near the surface. Moreover, the high concentrations of shallow Ga donors results in high concentration of free electrons, which significantly reduce the width of the surface depletion region according to the following formula: 55,56 …”

Section: Performance Of Uv Photosensors With Al- Ga- and In-doped Zmentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

View full text Add to dashboard Cite

In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

show abstract

Section: Performance Of Uv Photosensors With Al- Ga- and In-doped Zmentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Besides, the IZO nanorod as seen in Figure (c) shows a ripple‐like edge due to the incorporation of In ions into ZnO nanorods. These phenomena reveal that the crystal quality of the IZO nanorods is imperfect, existing different types of defects, such as surface defects and/or stacking faults . Figure (a) shows the EDS spectra of the IZO superlattice nanorod, which confirms the existence of Zn, In, and O elements in the IZO nanorods.…”

Section: Resultsmentioning

confidence: 76%

Photoluminescence and EPR of In‐Doped ZnO Superlattice Nanorods

Yang

Lou

Wang

2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

In2O3(ZnO)m (IZO) superlattice nanorods are synthesized via a chemical vapor transport method. By comparing the photoluminescence (PL) and electron paramagnetic resonance (EPR) spectral changes of the IZO nanorods under different annealing atmospheres, it is found that the deep level emissions could be attributed to VZn/VZn‐related acceptor defects (VZn‐R), or Oi/Oi‐R defects. The EPR spectrum of the IZO nanorods shows two EPR signals in a region near g ≈1.96, i.e., at g = 1.9524 and 1.9443, which come from VZn− and InormalnZn0 defects, respectively. The intensities of the g ≈1.96 lines gradually decrease after continuous illumination by white light, and increase to their starting value after the light is switched off, showing a well‐reversible process. The EPR signal change under illumination reveals that initially the defects of VZn− and InormalnZn0 are in paramagnetic charge state, and a two‐charge‐state model is suggested to interpret the photoexcitation kinetic of VZn involved.

show abstract

“…The turn-on electric field ( on E ) for electron emission is not only determined by the crystallinity and morphology of nanowires but is also dependent on the tunneling capability of electrons and the work function of nanowires. On the nanowire surface, the formation of surface-depletion regions induce an electric field built at the ZnO-vacuum interface, which leads to energy-band bending at the nanowire surface [13,33,[38][39][40][41][42][43][44]. Compared with the field-emission properties of ZnO-related nanostructures reported in the literature, these as-prepared ZnO:Ga nanowires achieved a lower turn-on field, as listed in Table 1.…”

Section: Considering the Incorporation Of Ga 2 O 3 In The Zno Latticementioning

confidence: 99%

ZnO:Ga nanowires with low turn-on field for field-emission lighting

Yang

Tsai

Lin

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Cited by 18 publications

References 26 publications

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Photoluminescence and EPR of In‐Doped ZnO Superlattice Nanorods

ZnO:Ga nanowires with low turn-on field for field-emission lighting

Contact Info

Product

Resources

About