Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

Shao, Shuyan; Talsma, Wytse; Pitaro, Matteo; Dong, Jingjin; Kahmann, Simon; Rommens, Alexander J.; Portale, Giuseppe; Loi, Maria Antonietta

doi:10.1002/adfm.202008478

Cited by 52 publications

(52 citation statements)

References 35 publications

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“…Also, the radially integrating intensity along the ring at q = 10 nm -1 performed a relatively sharp peak with the azimuth at 90° for BAAc-containing film, as shown in Figure 2h, which indicates a higher preferential orientation of perovskite. [26] To quantitatively analyze the crystal orientation distribution, the orientational order parameter S is calculated as follows [27] 1 2 3 1…”

Section: Resultsmentioning

confidence: 99%

Ionic Liquid Stabilizing High‐Efficiency Tin Halide Perovskite Solar Cells

et al. 2021

Advanced Energy Materials

128

149

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Tin halide perovskites attract incremental attention to deliver lead‐free perovskite solar cells. Nevertheless, disordered crystal growth and low defect formation energy, related to Sn(II) oxidation to Sn(IV), limit the efficiency and stability of solar cells. Engineering the processing from perovskite precursor solution preparation to film crystallization is crucial to tackle these issues and enable the full photovoltaic potential of tin halide perovskites. Herein, the ionic liquid n‐butylammonium acetate (BAAc) is used to tune the tin coordination with specific O…Sn chelating bonds and NH…X hydrogen bonds. The coordination between BAAc and tin enables modulation of the crystallization of the perovskite in a thin film. The resulting BAAc‐containing perovskite films are more compact and have a preferential crystal orientation. Moreover, a lower amount of Sn(IV) and related chemical defects are found for the BAAc‐containing perovskites. Tin halide perovskite solar cells processed with BAAc show a power conversion efficiency of over 10%. This value is retained after storing the devices for over 1000 h in nitrogen. This work paves the way toward a more controlled tin‐based perovskite crystallization for stable and efficient lead‐free perovskite photovoltaics.

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Section: Resultsmentioning

confidence: 99%

Ionic Liquid Stabilizing High‐Efficiency Tin Halide Perovskite Solar Cells

et al. 2021

Advanced Energy Materials

128

149

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“…[ 4 ] More importantly, the unique 2D layered crystal structure that organic and inorganic layers self‐assemble alternately in the direction perpendicular to a substrate enables charge carriers to transport in the inorganic frameworks, resembling the lateral transport behavior in field‐effect transistors. [ 5 ] The most common 2D layered perovskite materials currently used in transistors are Sn‐based perovskites, such as phenylethylammonium tin iodide perovskite ((PEA) 2 SnI 4 ) and its derivatives, [ 6 ] 2‐(3′″,4′‐dimethyl‐[2,2′:5′,2″:5″,2′″‐quaterthiophen]‐5‐yl)ethan‐1‐ammonium tin perovskite ((4TM) 2 SnI 4 ), [ 7 ] butylammonium tin iodide perovskite ( n ‐BA 2 SnI 4 ), [ 8 ] (PEA) 2 (FA) n −1 Sn n I 3 n +1 ( n = 4, 8; FA: formamidinium), [ 9 ] and (PEA) 2 CsSn 2 I 7 (Cs: cesium), [ 10 ] while very few studies have been focused on 2D Pb‐based perovskite field‐effect transistors. [ 3c,11 ] Among them, (PEA) 2 SnI 4 is the first hybrid perovskite material applied to transistors, [ 6a ] and a record‐breaking hole mobility of 15 cm 2 V −1 s −1 has been achieved in the (PEA) 2 SnI 4 field‐effect transistors in vacuum at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Charge Transport in 2D Layered Mixed Sn–Pb Perovskite Thin Films for Field‐Effect Transistors

Qin

Zhang

Qin

et al. 2021

Adv Elect Materials

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The optoelectronic characteristics of organic–inorganic perovskites can be tailored by mixing different metal cations with various ratios. 2D layered organic–inorganic perovskites with charge transport anisotropy are considered as promising channel materials for field‐effect transistors. However, there are few reports about 2D Pb‐based perovskite thin film transistors although their Sn counterparts have been extensively investigated for use in this field. Herein, the synthesis and tuning of the physical properties of 2D layered Sn–Pb perovskite solid solutions based on phenylethylammonium tin and lead iodide perovskites ((PEA)2SnxPb1−xI4 (x = 0, 0.3, 0.5, 0.7, 1)) are reported. A thermally activated semiconducting behavior is confirmed in this series of perovskite thin films. The electronic band structure, conductivity, and in‐plane ion migration are found to be largely affected by the Sn–Pb ratio, which is important for transistor performance. Furthermore, the 2D layered mixed Sn–Pb perovskite field‐effect transistors constructed on cheap and commercially available polymer dielectrics and a signature of field‐effect characteristics in the (PEA)2PbI4 film are demonstrated for the first time. The (PEA)2Sn0.7Pb0.3I4 transistor operating at room temperature in air exhibits a hole mobility of 0.02 cm2 V−1 s−1. This work can improve the understanding of the influence mechanisms of ion migration in 2D layered perovskite field‐effect transistors.

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“…[ 111 ] This device operated at room temperature upon p‐type doping with ZnI 2 and yielded a mobility of μ h = 0.007 cm 2 V –1 s –1 and enhanced stability resulting from the reduction in tin‐rich clusters. By adding a small amount of the 2D tin perovskite into the 3D formamidinium tin triiodide (FASnI 3 ) perovskite, Loi and co‐workers managed to reduce the inherent p‐doping and enhance the crystallinity of the film, which yielded FET devices with hole mobilities of μ h = 0.21 cm 2 V –1 s –1 , on/off ratios of 10 4 , V th = 2.8 V. [ 137 ] To the best of our knowledge, this represents the first example of a 3D Sn‐based perovskite FET, and consisted of bottom Au contacts, a PEA 2 FA n –1 Sn n I 3 n +1 semiconductor layer (with various compositions containing n = 1, 4, or 8), and a top gate dielectric consisting of a PMMA/Al 2 O 3 double layer.…”

Section: Current Status In Perovskite Transistors and Phototransistorsmentioning

confidence: 99%

mentioning

confidence: 99%

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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Field‐Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

Cited by 52 publications

References 35 publications

Ionic Liquid Stabilizing High‐Efficiency Tin Halide Perovskite Solar Cells

Ionic Liquid Stabilizing High‐Efficiency Tin Halide Perovskite Solar Cells

Charge Transport in 2D Layered Mixed Sn–Pb Perovskite Thin Films for Field‐Effect Transistors

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

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