Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

Chen, Yu; He, Zezhao; Song, Xubo; Gao, Xiao; Liu, Qingbin; Zhang, Yanhui; Yu, Guanghui; Han, Tao; Liu, Chen; Feng, Zhihong; Cai, Shujun

doi:10.1109/led.2020.3045710

Cited by 11 publications

(10 citation statements)

References 23 publications

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“…The performance metrics of the LNA are its gain, , noise figure, NF, and power consumption, P [72,73]. Generally, the LNAs should have higher and lower NF [2,25]. is defined as the power ratio dissipated in the load to the power delivered to the transistor input and NF is defined as the amount of noise generated by the RF transistors.…”

Section: Low-noise Amplifiermentioning

confidence: 99%

“…The gate of the GFET was designed with a T-shaped structure to reduce charge trapping and the parasitic resistance at the gate/channel interface and source/drain contacts, respectively. Recently, in 2021, Yu et al reported another GFET-based LNA [25]. In their study, the LNA Monolithic Microwave Integrated Circuit (MMIC) was fabricated with a monolayer GFET, and it was the first LNA MMICs demonstrated that incorporate both noise and small-signal models.…”

Section: Low-noise Amplifiermentioning

confidence: 99%

“…One of the best properties of a GFET is its ambipolar characteristics, and it is best used in RF components [10][11][12][13]. To date, several GFET-based RF components have been demonstrated, such as oscillators [14][15][16][17][18][19][20], phase shifters [21,22], amplifiers [23][24][25][26], mixers [27][28][29][30][31], and frequency multipliers [32,33]. A GFET in RF was first demonstrated in 2008 [34], and since then, its performance has gradually improved.…”

Section: Introductionmentioning

confidence: 99%

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Section: Low-noise Amplifiermentioning

confidence: 99%

Section: Low-noise Amplifiermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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“…This feature is extremely interesting, for example, for the aerospace field, particularly because it is accompanied by graphene's inherent tolerance to radiation [30][31][32]. For these reasons, several examples of graphene-based RF devices have been proposed in recent years, including antennas [33,34], transmitters and receivers [35][36][37], modulators and demodulators [38][39][40][41][42][43], shields [44], power and signal amplifiers [45][46][47][48], mixers [49][50][51], and oscillators [52][53][54]. Important milestones were recently reached towards the large-scale fabrication of graphene electronic devices [55] and their integration into traditional semiconductor fabrication lines [56].…”

Section: Introductionmentioning

confidence: 99%

Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

2021

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The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

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“…A GFET amplifier with integrated microstrip lines was published in 2016 [13] with a gain of 3.4 dB at 14.3 GHz. Recently, a C-band graphene low-noise amplifier with a maximum gain of 8.3 dB at 5.5 GHz was reported [16]. However, graphene transistor technology is still in its infancy and faces several manufacturing difficulties resulting in poor yield and large variation in device parameters [17].…”

mentioning

confidence: 99%

Integrated 10-GHz Graphene FET Amplifier

et al. 2021

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Graphene has unique electrical and mechanical properties which can pave the way for new types of devices for microwave applications. However, emerging technologies often have problems with yield and still considerable variation in device parameters cause great challenges for circuit design. In this paper, we present the design and development of an integrated graphene FET amplifier addressing this challenge. A representative graphene FET was selected from a set of devices and then the input and output matching circuits were designed using the negative-image technique. The two-finger GFET with a gate length of 0.5 μm exhibit a typical f T and f max of 35 GHz and 37 GHz, respectively. The integrated graphene FET amplifier was fabricated on a high-resistivity silicon substrate together with thin film capacitors, airbridges, and spiral inductors. A record high gain of 4.2 dB at 10.6 GHz was measured for a single transistor amplifier stage and agrees well with simulations. These results indicate significant progress towards active microwave circuits based on emerging 2D materials.INDEX TERMS Amplifiers, field-effect transistors, graphene, integrated circuits, microwave electronics, negative-image techniques. I. INTRODUCTION

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Field Effect Transistors and Low Noise Amplifier MMICs of Monolayer Graphene

Cited by 11 publications

References 23 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Integrated 10-GHz Graphene FET Amplifier

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