Field-Effect Mobility of Organic Polymer Thin-Film Transistors

In this paper we present both finite element based and analytic model simulations of pentacene based organic thin film transistor. The finite element type simulation is done using Silvaco's Atlas simulator and the analytic model simulation is performed using a Matlab code based on the standard transistor equations. Both the Atlas and Matlab simulations agree approximately with the published experimental result. The results of the simulations show a current ratio of 2.11 × 10 6 for Atlas and 1.8 × 10 7 for Matlab simulations. The threshold voltage extracted from the finite element type simulation is 1.1 V which is in good agreement with 1.2 V used for Matlab simulation. However, the contact resistance shows a quite significant variation between the two simulation mechanisms. The finite element type simulation gives a contact resistance of 10 k whereas the Matlab simulation predicts a contact resistance 1.9 k .

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“…The Matlab simulations were employed using the standard transistor equation (2) for the linear and (3) for the saturation regions [40][41][42] …”

Section: Matlab Simulationmentioning

confidence: 99%

Simulation of top-contact pentacene thin film transistor

Wondmagegn

Pieper

2009

J Comput Electron

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“…In particular, remarkable achievement in the development of organic field-effect transistors (OFETs) has been made for the low-cost, light-weight and flexible organic electronics. [1][2][3][4][5][6] The performance of OFETs has been improved dramatically through intensive and focused research effort, and already reached the level of conventional hydrogenated amorphous silicon transistors. 4,7 Considering that charge transport occurs within a few monolayer of organic semiconductor, surface properties of gate dielectric could affect the growth mechanism of organic semiconductor and performance of OFETs.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of fluorinated polymer gate dielectric with improved wetting property and its application to organic field-effect transistors

Kim

Jung

et al. 2009

Macromol. Res.

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We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [-CH] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm 2 /Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.

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“…[1,2] They can be designed to display properties similar to those of conventional semiconducting materials, which makes it possible to fabricate organic light sources, such as organic light-emitting diodes (OLEDs) and laser diodes, [3] photovoltaic cells, [4,5] and thin-film transistors. [6,7] In the field of nonlinear optics, conjugated polymers are of interest for potential applications in all-optical devices such as optical switches, modulators, and active waveguides [8] due to their very large molecular hyperpolarizabilities and ultrafast responses. In turn, these properties originate from the strong delocalization of the p-electronic system that is a distinctive feature of conjugated organic polymers.…”

Section: Introductionmentioning

confidence: 99%

Non‐Resonant z‐Scan Characterization of the Third‐Order Nonlinear Optical Properties of Conjugated Poly(thiophene azines)

et al. 2008

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The nonlinear optical properties of a functionalized poly(thiophene azine), namely, poly(3,4-didodecylthiophene azine), PAZ, at the optical telecommunication wavelength of 1550 nm are investigated by means of the closed-aperture z-scan technique in both thin films and solutions. Values of chi((3))=(2.4+/-0.4)x10(-13) esu, n(2)=(4.0+/-0.7)x10(-15) cm(2) W(-1), and gamma=(4.5+/-0.7)x10(-34) esu are estimated for the third-order (Kerr) susceptibility, the intensity-dependent refractive index, and the molecular second hyperpolarizability of solution samples, respectively. A very small dependence on the polymer chain length is found. Markedly higher values of (4.4+/-1.1)x10(-11) esu, (6.6+/-1.0)x10(-13) cm(2) W(-1), and (5.0+/-0.8)x10(-33) esu are measured for the corresponding quantities in thick (up to 20 mum) polymer films cast on quartz plates. The enhancement of the NLO responses on going from solution to solid samples is attributed to a partially ordered structure and to the presence of interchain interactions leading to greater pi-electron delocalization in the cast polymer films. The results are compared with those previously obtained by using third-harmonic generation (THG), taking into account that those data were measured under conditions of three-photon resonance, whereas our z-scan measurements are fully off-resonance.

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Field-Effect Mobility of Organic Polymer Thin-Film Transistors

Cited by 48 publications

References 24 publications

Simulation of top-contact pentacene thin film transistor

Simulation of top-contact pentacene thin film transistor

Synthesis of fluorinated polymer gate dielectric with improved wetting property and its application to organic field-effect transistors

Non‐Resonant z‐Scan Characterization of the Third‐Order Nonlinear Optical Properties of Conjugated Poly(thiophene azines)

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