Simulation of top-contact pentacene thin film transistor

Wondmagegn, Wudyalew; Pieper, R.J.

doi:10.1007/s10825-009-0265-3

Cited by 37 publications

(15 citation statements)

References 45 publications

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“…Fig. 8(b) shows the comparitive analysis of model equations, simulated result and published experimental result [6,8] for drain current at V GS ¼ À2.1 V and V GS ¼ À3.0 V. From the figure, it is clear that the results obtained through model equations and device simulations are evidence for concurrence with experimental results, only by considering the effect of contact resistance and mobility enhancement factor simultaneously, which validate the analytical modeling of OFET.…”

Section: Comparison Of Device Simulation and Analytical Values With Esupporting

confidence: 60%

“…where m(E) is the field dependent mobility, m 0 is the zero field mobility, E is the electric field, D is the zero field activation energy, b is the electron Pool-Frenkel factor, g is the fitting parameter, k is the Boltzmann constant and T is the temperature [8]. For simulation, referred values for D and b are 0.018 eV and 7.7 Â 10 À 5 eV (V/ cm) 0.5 respectively [9].…”

Section: Finite Element Based Two Dimensional Device Simulation Of Ofetmentioning

confidence: 99%

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Channel length variation effect on performance parameters of organic field effect transistors

Mittal

Kumar

Negi

et al. 2012

Microelectronics Journal

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Section: Comparison Of Device Simulation and Analytical Values With Esupporting

confidence: 60%

Section: Finite Element Based Two Dimensional Device Simulation Of Ofetmentioning

confidence: 99%

Channel length variation effect on performance parameters of organic field effect transistors

Mittal

Kumar

Negi

et al. 2012

Microelectronics Journal

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“…Initially, we simulated a typical 2D top-contacted-bottom-gate OTFT (figure 1) in accordance with previous research works [10][11][12][13][14] and with characteristics (critical region sizes and materials) resembling the textile organic cylindrical transistors of our interest.…”

Section: Simulated Devicesmentioning

confidence: 99%

Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool

Louris

Stefanakis

Priniotakis

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. We used a commercial TCAD tool in order to simulate a cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes in its electrical characteristics. The simulation was based on models and parameters similar to those of previous simulations in Organic Thin Film Transistors. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters. By optimizing critical region sizes of the device we conclude that the device should have an active layer thickness below 100 nm, channel length around 10μm and gate oxide thickness as small as possible (300 nm or less), in order to have optimum transistor performance. IntroductionPrevious research works in the area of electronic textiles have proved the possibility to construct Textile Organic Field Effect Transistors (TOFETs). More specificaly, fibre-based transistors can be fabricated by applying diferrent material layers on conventional textile fibres [4][5][6][7][8]. In our work we tried to simulate and evaluate the performance of a cylindrical fibre-based transistor by using a TCAD modelling -simulation tool [9]. Although the simulation of planar OTFT (Organic Thin Film Transistor) has been thoroughly studied [1][2][3], the literature regarding simulation of cylindrical fiberbased TOFET is still poor. Simulations are expected to give more ideal results, regarding the electrical characteristics (figure of merits) of the electronic devices, when compared with the real devices measured in the laboratory. However, simulation can be a very helpful tool for designing, predicting the performance and optimizing the device prior its construction in the laboratory, thus, facilitating the setting of targets that potentially can be achieved in the laboratory.Our target was initially to achieve a "functional" (reliable and fast) simulation of the cylindrical TOFET, in order to evaluate the peculiarities, difficulties and restrictions of the simulation, and subsequently to examine, in a semi -theoretical approach, the feasibility to fabricate a TOFET operating under low voltages, which is extremely important for future applications in electronic wearable textiles.

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“…Whereas, in BC devices, very low values of g m are extracted and shows only 1% decrease for L=5 to 10 μm variation. It happens due to the larger contact resistance of these devices and no strong impact has been shown on it due to channel length variation [7]. …”

Section: Transconductance (G M )mentioning

confidence: 99%

Analysis of Top and Bottom Contact Organic Transistor Performance for Different Technology Nodes

Mittal

Negi

Singh

2012

2012 International Symposium on Electronic System Design (ISED)

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This research paper analyzes the performance of organic thin film transistor (OTFT) for two typical structures, viz., bottom gate top contact (BGTC) and bottom gate bottom contact (BGBC). The analysis is carried out for channel length (L) from 5 to 50 μm. A significant reduction in drain current for top contact is observed, however, it remains constant for the bottom contact device. Transconductance of the top contact device falls about 50% from 5 to 10 μm L; however, for bottom contact only 1% reduction is observed. Besides this, mobility in top contact is almost constant, whereas in bottom contact, mobility increases with larger channel lengths. Furthermore, total resistance decreases with higher gate bias, due to increase in carrier density within a channel and near contacts for both devices.

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Simulation of top-contact pentacene thin film transistor

Cited by 37 publications

References 45 publications

Channel length variation effect on performance parameters of organic field effect transistors

Channel length variation effect on performance parameters of organic field effect transistors

Optimization of cylindrical textile organic field effect transistors using TCAD simulation tool

Analysis of Top and Bottom Contact Organic Transistor Performance for Different Technology Nodes

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