Field-effect changes of the galvanomagnetic properties of a semiconductor

Preuss, E.

doi:10.1016/0039-6028(70)90033-6

Cited by 7 publications

(1 citation statement)

References 14 publications

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“…A few papers report on the dependence of galvanomagnetic effects on band bending [19,20] and on boundary [21 to 231 for the 111-V compound InSb. Preuss [19], who used ac field effect, determined with a two-conductor two-band model the bulk carrier concentrations and niobilites from the galvanomagnetic effects measured without the field voltage, and the surface carrier mobilities during applying the electric field. which confirni qualitatively diffuse surface scattering.…”

Section: Introductionmentioning

confidence: 99%

Size Effect on the Magnetoresistance of p-InSb

Kreutz

1983

Phys. Stat. Sol. (a)

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The magnetoresistance of p‐Insb single crystal specimens with real surfaces is measured as a function of thickness, magnetic induction, temperature, and surface potential. Field effect and Hall coefficient are employed to determine the barrier height and the carrier concentrations during the investigations. The discrimination of the resistance change into ambipolar, scattering, inhomogeneity, and geometry effect is experimentally investigated by variation of sample thickness at different barrier height. The data are thoroughly discussed by the two‐conductor three‐band model taking into account the separation into electrons, light, and heavy holes.

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Section: Introductionmentioning

confidence: 99%

Size Effect on the Magnetoresistance of p-InSb

Kreutz

1983

Phys. Stat. Sol. (a)

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Thickness dependence of the galvanomagnetic properties of InSb

Kreutz

Waack

1974

Phys. Stat. Sol. (a)

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The electrical conductivity and the Hall coefficient of InSb single crystal specimens with real surfaces have been measured as a function of thickness and magnetic induction at various temperatures. A two conductor three band model is proposed for interpreting the experimental results. The mobilities and the carrier concentrations in the semiconductor bulk are obtained from measurements of the galvanomagnetic properties at high sample thickness. The galvanomagnetic properties of the semiconductor surface are derived from comparison between theoretical and experimental curves.

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