The transverse magnetoresistance and its anisotropy are measured as functions of the sample thickness in thin InSb layers. Size effects are found in the regions of intrinsic and extrinsic conduction.

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A method is developed of calculating galvanomagnetic and thermomagnetic coefficients taking into account successively the inelastic scattering on the polarisation potential of the optical phonons together with the elastic scattering mechanisms. In the approximation of weak magnetic fields, the solution of the Boltzmann transport equation is expanded into a power series of the magnetic field by means of perturbation theory. Numerical computations for n-GaAs with impurity concentrations of 1012 to lozo cm+ in the temperature range of 4.2 to 600 O K are made. The results are given as nomograms which are convenient for experimental data processing. The peculiarities of the behaviour of transport coefficients depending on the impurity concentration are analysed.

The transmitted phonon drag effect (TPDE) predicted by Shockley (1) has been studied on n-p-n-junctions of germanium and silicon. In this paper, the TPDE is considered a s applied to epitaxial n-i-n-structures (n being a semiconductor film of electron type and i being a semi-insulating layer).If an electric field E is applied to a film of n-type (emitter), a phonon drag caused by electrons appears in this film. These phonons (we call them relevant) penetrate the i-layer (propagating layer) scattering on phonons, impurities, a t the film-substrate boundary, e t c . , and having reached the bottom film (receiver) they transmit their momentum to the electrons. A s a result of this, a direct movement of the electrons (electron drag caused by phonons) and, therefore, the electric field E of polarity opposite to E occurs.

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