Field dependence of emission and capture rates of<i>DX</i>-related centers in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mm

Jia, Y. B.; Grimmeiss, H. G.

doi:10.1103/physrevb.47.1858

Cited by 16 publications

(8 citation statements)

References 13 publications

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“…However, this sort of trend of carrier emission as a function of electric field has also been observed for DX-related centres in GaAs/AlGaAs MQWs structures by Jia et al . [12]. In addition, this effect was found to be dependent on the Al composition.…”

Section: Discussionmentioning

confidence: 94%

“…Jia et al [12] suggested that these changes in the emission and capture rates at different field strengths are due to the traps which are closely located and interacting with each other. Moreover, if the electric field is not uniform in the depletion region of the Schottky junction, emission rates contribute non-uniformly from the depletion layer edge (zero field) to the maximum junction field [13].…”

Section: Discussionmentioning

confidence: 99%

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Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

et al. 2010

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Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100) plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region) to 4.7 9 10 6 V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311)B plane. The E c -0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at E c -0.24 eV is 0.39 eV.

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Section: Discussionmentioning

confidence: 94%

Section: Discussionmentioning

confidence: 99%

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

et al. 2010

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“…have been studied early for the DX-related centers in silicondoped AlGa1As alloys. 4 We are merely discussing the relative change here since the absolute values may be effected by the interaction of different DLTS peaks. Further studies are suggested in order to clarify definitely if the observed field changes are due to one or more centers, or are the characteristics of the defects.…”

Section: Resultsmentioning

confidence: 99%

<title>Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes</title>

et al. 1994

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The parameters of the deep centers in MOCVD 1n053Ga047As Vayers and their dependence on electric field value and device topology on the wafers were studied by DLTS method in In0 53Ga0 47As/lnP p-i-n photodiodes . The two deep centers with the activation energy E, -0.299 and 0.389eV were discovered in depletion region of the p-i-n diodes. The latter defects are nonradiative recombination centers with strong electric field dependence of their activation energies and strong temperature dependence of the capture cross sections.

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“…14,15,22,23 For the time constant 2 , we find a thermal activation energy of 55 meV, which is not consistent with the values of around 250 meV commonly measured by capacitance spectroscopy. 24 By switching the light source off in our transport experiments, the resistance of the contact layers increases continuously due to the capture of electrons by DX centers. 24 By switching the light source off in our transport experiments, the resistance of the contact layers increases continuously due to the capture of electrons by DX centers.…”

Section: Discussionmentioning

confidence: 97%

Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

Rogozia

Krispin

Grahn

2001

Journal of Applied Physics

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For transport studies on semiconductor superlattices under optical excitation, samples with highly Si-doped ͑Al,Ga͒As contact layers are used due to their optical transparency. These samples exhibit a giant increase of the resistance at temperatures below 200 K. Likewise, the current plateau in the I -V characteristics, which contains the region of current self-oscillations, is shifted towards higher voltages. However, the oscillation frequencies remain unchanged. The current decreases during cooling by as much as seven orders of magnitude. The giant resistance can be compensated for at low temperatures by applying a high dc voltage or by weak illumination. The optically induced current transients are shown to be controlled by thermally activated processes. On the basis of the activation energies derived, it is suggested that the dramatic resistance changes are mainly due to deep donors, i.e., well-known DX centers, in the ͑Al,Ga͒As contact layers. The effects are negligible, if GaAs contact layers are used. Possible DX centers at the AlAs/GaAs interfaces inside the superlattice structure can be therefore neglected.

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Field dependence of emission and capture rates ofDX-related centers inAlxGa1

Cited by 16 publications

References 13 publications

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates

<title>Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes</title>

Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

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