No abstract

Compact solid-state lamps based on light-emitting diodes (LEDs) are of current technological interest as an alternative to conventional light bulbs. The brightest LEDs available so far emit red light and exhibit higher luminous efficiency than fluorescent lamps. If this luminous efficiency could be transferred to white LEDs, power consumption would be dramatically reduced, with great economic and ecological consequences. But the luminous efficiency of existing white LEDs is still very low, owing to the presence of electrostatic fields within the active layers. These fields are generated by the spontaneous and piezoelectric polarization along the [0001] axis of hexagonal group-III nitrides--the commonly used materials for light generation. Unfortunately, as this crystallographic orientation corresponds to the natural growth direction of these materials deposited on currently available substrates. Here we demonstrate that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency. We expect that this approach will pave the way towards highly efficient white LEDs.

In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has witnessed significant progress in theoretical descriptions as well as in experimentally observed non-linear phenomena. However, until now, a clear distinction between non-linear transport in strongly and weakly coupled SLs was missing, although it is necessary to provide a detailed description of the observed phenomena. In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to be described by spatially discrete equations. Therefore, weakly coupled SLs exhibit a more complex dynamical behaviour than strongly coupled ones, which includes the formation of stationary electric field domains, pinning or propagation of domain walls consisting of a charge monopole, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos. This review summarizes the existing theories and the experimentally observed non-linear phenomena for both types of semiconductor SLs.

For the full implementation of spintronic circuits, it is necessary to transmit spin information from one device to another. Electrons in semiconductors often suffer from high spin relaxation rates, making electrical transport of spin information highly inefficient. Here, we propose optical transport of spin information as an alternative. We demonstrate that the spin information associated with electrons injected from Co2FeSi and Fe layers into the quantum wells of spin light emitting diodes (spin-LEDs) can be transported optically in the form of circularly polarized light and deciphered electrically via the magnetic field dependence of the photocurrent in a distant detector spin-LED.