Abstract:This paper considers the transport of conduction band electrons as a result of tunneling through a triangular potential barrier fabricated within a GaAs/Al x Ga 1-x As/GaAs heterojunction. The triangular barrier was formed by the composition grading of the Al x Ga 1-x As region from x = 0 to x = 0.3, which forms part of a cathode emitter in a commercial Gunn diode. The experimental data for the current -voltage characteristics obtained for a range of temperatures from 77 to 273 K were used to test a simplified… Show more
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