1999
DOI: 10.1109/16.737462
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Field and temperature acceleration model for time-dependent dielectric breakdown

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Cited by 87 publications
(43 citation statements)
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“…On the other hand, high temperature enhances gate oxide breakdown, which is a strong function of temperature and electric field [17]. In our stress experiments, however, no noticeable increase in gate leakage current was detected when V DD2 was stressed at 3.5, 4, and 4.5 V. This suggests that no transistor oxide hard breakdown occurred since hard breakdown typically results in a sudden surge of gate current [18], [19] and could collapse RF performances.…”
Section: Physical Insight Through the Mixed-mode Device And Circumentioning
confidence: 58%
“…On the other hand, high temperature enhances gate oxide breakdown, which is a strong function of temperature and electric field [17]. In our stress experiments, however, no noticeable increase in gate leakage current was detected when V DD2 was stressed at 3.5, 4, and 4.5 V. This suggests that no transistor oxide hard breakdown occurred since hard breakdown typically results in a sudden surge of gate current [18], [19] and could collapse RF performances.…”
Section: Physical Insight Through the Mixed-mode Device And Circumentioning
confidence: 58%
“…temperature, voltage or pressure), and then the collected data is extrapolated through a physically reasonable statistical model to estimate the reliability of the system at lower, normal use conditions. These models are especially important in the context of highly reliable items, where it is often virtually impossible to demonstrate that a reliability goal has been attained (Nelson 1990;Kimura 1999).…”
Section: Accelerated Failure Time Modelmentioning
confidence: 99%
“…It manifests itself both in the gate stack of devices and across wires of an integrated system. We also assume two modeling papers: one for TDDB manifestation on wires [Bekiaris et al 2011] and one for devices [Kimura 1999]. In case we would like to systematically classify these two papers, we should further split the "irreversible mechanism" leaf of our classification framework (see Figure 10) into two complementary categories.…”
Section: Reusability and Extensibility Of The Proposed Classificationmentioning
confidence: 99%
“…An example of accumulating physical mechanisms that may cause reliability violations is time-dependent dielectric breakdown (TDDB). A modeling attempt can be found in Kimura [1999]. A series of experimental measurements yields formal correlations between the cumulative failure of the tested devices and TDDB intensity metrics.…”
Section: Platform-inherent Reliability Violationsmentioning
confidence: 99%