Abstract-A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.Index Terms-Cascode class E, gate oxide breakdown, output power, power amplifier (PA), power efficiency, reliability.
This paper presents a compact 27.6-65.5GHz broadband Marchand balun in a 65-nm 1P6M CMOS technology. It uses stacked coupled structure for millimeterwave application. The stacked coupled structure uses different layers coupling signals, instead of a planar layer, to reduce Machand balun size The balun bandwidth is 81.2%, the amplitude imbalance is less than 0.8 dB, and the phase imbalance is less than 8°. The balun occupies a 0.12mm 2 die area.Index Terms -Balun, millimeter wave, broadband, stacked structure, Marchand balun, monolithic microwave integrated (MMIC).
This study presents a 53.6 GHz wideband direct injection-locked frequency divider (DILFD) using 65 nm CMOS technology. By operating a RF input transistor in subthreshold region and changing its forward body bias, the proposed DILFD achieves a 28.6 GHz (72%) locking range with 6.7 mW power consumption and 1 V supply voltage. When varying the supply voltage from 0.9 V to 1.1 V or its physical temperature from 253 K to 373 K, the measured locking range remains more than 22 GHz.Index Terms -CMOS, injection-locked frequency divider (ILFD).
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