2019
DOI: 10.1364/ao.58.001662
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Fiber-optic Fabry–Perot pressure sensor based on sapphire direct bonding for high-temperature applications

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Cited by 47 publications
(14 citation statements)
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“…The large diameter and highly multimode nature of sapphire inhibit the migration from silica fibers to sapphire fibers in conventional interferometry [ 103 ]. Over the years, researchers have initially realized the fabrication of sapphire FPI using different fiber fusion [ 104 , 105 , 106 , 107 , 108 ], sapphire wafer fusion [ 109 , 110 , 111 , 112 ], and metal coating [ 113 , 114 , 115 , 116 ]. Fabry–Perot interferometric sensors can be divided into two main groups: intrinsic FPI (IFPI)and extrinsic FPI (EFPI) [ 63 ].…”
Section: Interferometric Sensorsmentioning
confidence: 99%
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“…The large diameter and highly multimode nature of sapphire inhibit the migration from silica fibers to sapphire fibers in conventional interferometry [ 103 ]. Over the years, researchers have initially realized the fabrication of sapphire FPI using different fiber fusion [ 104 , 105 , 106 , 107 , 108 ], sapphire wafer fusion [ 109 , 110 , 111 , 112 ], and metal coating [ 113 , 114 , 115 , 116 ]. Fabry–Perot interferometric sensors can be divided into two main groups: intrinsic FPI (IFPI)and extrinsic FPI (EFPI) [ 63 ].…”
Section: Interferometric Sensorsmentioning
confidence: 99%
“…In recent years, air cavity EFPIs have been reported and successively applied for high-temperature sensing. The method is to etch the sapphire wafer [ 111 , 112 ] or sapphire fiber [ 118 ] first and then bond it directly with the sapphire wafer to form an air cavity. In 2017, Li et al proposed a direct sapphire bonding method using plasma surface activation, hydrophilic prebonding, and high-temperature annealing [ 111 ].…”
Section: Interferometric Sensorsmentioning
confidence: 99%
“…At present, numerous high-temperature pressure sensors based on various principles, including silicon-on-insulator (SOI), silicon carbide (SiC), sapphire fiber, and wireless passive LC, have been developed [5][6][7][8][9][10]. In 2017, Zhang [11] et al proposed a novel ultra-high-pressure sensor combining a truncated cone structure and an SOI piezoresistive element for measuring pressure up to 1.6 GPa.…”
Section: Introductionmentioning
confidence: 99%
“…SiO 2 and glass) and enhance their bonding strength [19]- [22]. Li et al proposed a hydrophilic sapphire wafer bonding method by combining O 2 plasma activation and high temperature bonding process, which have been successfully applied in wireless passive sensors and fiber-optic pressure sensors for harsh environments [23]- [26]. Silke H. Christiansen et al also enhanced the bonding energy of wafers via high temperature annealing process [27], [28].…”
Section: Introductionmentioning
confidence: 99%