FET Modeling for Circuit Simulation

Divekar, D.

doi:10.1007/978-1-4613-1687-9

Cited by 30 publications

(7 citation statements)

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“…Current mirrors are assumed to be ideal. Expressions used to model these effects are found in [4]. Hand analysis showed that the mobility degradation of M I and Mz and the channel length modulation of M3 and n/r, contribute to the distortion the most; these observations were confirmed by computer simulations.…”

Section: Second Order Effectsmentioning

confidence: 52%

A CMOS square-law programmable floating resistor

Sakurai

Ismail

1993 IEEE International Symposium on Circuits and Systems

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2. The Ohio State University, on leave at the Norwegian Inst. Tech., Phys. Elec. N-7034, Trondheim, Norway Abatract -A CMOS architecture for a floating lincar resistor which exploits the square-law model of the MOS transistor is presented [l]. The architecture is programmable by DC control voltage and it is thresholdvoltage independent. The architecture is fabricated in a 2 p m p-well CMOS MOSIS process. The resistor occupies 210pm x 270pm, consumes .4--4mW with f 5 V supply and exhibits a signal(at 1% THD) to noise ratio of more than lOOdB over a 1V range of the DC control voltage.

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Section: Second Order Effectsmentioning

confidence: 52%

A CMOS square-law programmable floating resistor

Sakurai

Ismail

1993 IEEE International Symposium on Circuits and Systems

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“…3 was obtained under the following assumptions: an ideal current source I b is biasing the VCO; the diodes function as capacitors; the substrate capacity is neglegible; the circuit is perfectly symmetric; and the control voltage is constant. We use the Schichman-Hodges PMOS model [5], where the current I DS (V GS , V DS ) is given piecewise as follows: …”

Section: Verification Of Oscillator Circuitsmentioning

confidence: 99%

Verifying analog oscillator circuits using forward/backward abstraction refinement

Frehse

Krogh

Rutenbar

2006

Proceedings of the Design Automation &Amp; Test in Europe Conference

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“…At ÿrst, the linear AC situation is studied, and then the result is compared with the small-signal limit given by the large-signal analysis. Using Equations (15) and (16) and writing the equations for the power delivered to the source and drain ports of the circuit…”

Section: Small-signal and Large-signal Powers In Charge Elementsmentioning

confidence: 99%

A new rule for MESFET gate charge division based on the energy conservation principle

Kallio¹,

Valtonen²

2004

Circuit Theory & Apps

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SUMMARYThe energy conservation problem in the MESFET gate charge model is presented. The energy conservation requirement leads to symmetrical transcapacitances in contradiction to the commonly accepted approaches. The transcapacitance symmetry is completely independent of device symmetry. The resulting small-signal capacitances are reciprocal. Reciprocal capacitances are often considered charge nonconservative because they do not contain transcapacitances, but in this approach reciprocity is the result of transcapacitance symmetry and the charge conservation problem is avoided since the charge-based model includes the transcapacitances. A method for dividing the MESFET gate charge into gate-drain and gate-source portions based on the energy conservation rule is developed, and the method is applied to the well-known Statz gate charge as an example.

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FET Modeling for Circuit Simulation

Cited by 30 publications

References 0 publications

A CMOS square-law programmable floating resistor

A CMOS square-law programmable floating resistor

Verifying analog oscillator circuits using forward/backward abstraction refinement

A new rule for MESFET gate charge division based on the energy conservation principle

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