Ferromagnetism in transition-metal-doped II–VI compounds

Liu, Yong; Liu, Bang-Gui

doi:10.1016/j.jmmm.2006.04.009

Cited by 16 publications

(2 citation statements)

References 43 publications

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“…Its semimetal behaviour was also demonstrated theoretically by using first principles calculations of electron band structure in several papers (see e.g. [5,6,7] and references therein). However, the experimental implementation of these unique properties is limited by a very low solubility of Cr in CdTe.…”

Section: Introductionmentioning

confidence: 84%

Characterization of CdCrTe Layers Obtained by Pulsed Laser Deposition

Sagan

Popovych

Bester

et al. 2013

SSP

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In this paper we have obtained CdCrTe thin layers by PLD method using the YAG:Nd3+ laser with pulse length 250μs. Synthesized CdCrTe solid solution with 50% at. of Cr has been taken as a target. The layers were deposited on KCl substrate. The target and films were analyzed using X-ray diffraction, TEM microscope and THEED electron diffraction. The morphology of the layers are homogenous. However, we have detected several crystallographic phases: cubic CdTe, hexagonal Cr and hexagonal Te. From the measurements of lattice constant of the layer, their composition was determined to be x=0,14

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Section: Introductionmentioning

confidence: 84%

Characterization of CdCrTe Layers Obtained by Pulsed Laser Deposition

Sagan

Popovych

Bester

et al. 2013

SSP

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“…More importantly, due to specific electronic and phonon features these materials have abundant potential for thermoelectric and optoelectronic applications [1][2][3][4]. Moreover, recently, ZnTe was doped by different transition metals that caused a huge attention due to their attractive magnetic properties, high fluorescence and structural compatibility with II-VI semiconductors and some essential III-V semiconductors, for example, GaAs [5][6][7][8][9][10][11]. In 2010, Mn-doped ZnTe was proposed due to its good 2 of 15 theoretical band gap [12,13].…”

Section: Introductionmentioning

confidence: 99%

Insight into the Optoelectronic and Thermoelectric Properties of Mn Doped ZnTe from First Principles Calculation

et al. 2019

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Using DFT band structure simulations together with semi-classical Boltzmann transport kinetics equations, we have explored the optoelectronic and transport features of MnxZn1−xTe (x = 8% and 16%) crystals. Optimization of the doping and related technological processes it is extremely important for optimization of the technological parameters. The Generalized Gradient Approximation is applied to compute the corresponding band structure parameters. We have applied the Generalized Gradient Approximation Plus U (GGA+U). We have demonstrated that MnxZn1−xTe (x = 8% and 16%) is a direct type band semiconductor with principal energy gap values equal to 2.20 and 2.0 eV for x = 8% and 16%, respectively. The energy gap demonstrates significant decrease with increasing Mn content. Additionally, the origin of the corresponding bands is explored from the electronic density of states. The optical dispersion functions are calculated from the spectra of dielectric function. The theoretical simulations performed unambiguously showed that the titled materials are simultaneously promising optoelectronic and thermoelectric devices. The theoretical simulations performed showed ways for amendment of their transport properties by replacement of particular ions.

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