Ferroelectric Switching Dynamics and Pulse-Switching Polarization Measurements

Enhanced ferroelectric polarization in tetragonally strained NaNbO3 thin film on single crystal Rh substrate

“…For this switching, we used a square pulse with the rising time of about 1 ns. The Pt/NaNbO 3 /Rh capacitor shows a fast switching behavior within 72 ns which is faster than that of polycrystalline PZT capacitors [17]. This rapid ferroelectric switching behavior of the NaNbO 3 thin film gives the opportunity for a non-volatile memory application.…”

Multiferroic properties of YCrO3 thin films on glass substrate

“…Before the measurement, we applied a negative bias of À 5 V to align a ferroelectric domain polarity, then we applied a positive bias of 5 V to the YCO capacitors. YCO1 (80 ns) and YCO2 (75 ns) displayed faster switching behavior than PZT (120 ns) [19]. The fast switching speed of the YCrO 3 capacitor indicates that it can potentially be used in memory applications.…”

Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

“…2b [19]. For the switching measurement, we used consecutive square pulse train which had a width of input pulse of 1 ms with a rising time of about 1 ns.…”