Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

Ahn, Yoonho; Seo, Jeongdae; Lim, Dong Woo; Son, Jong Yeog

doi:10.1016/j.cap.2015.02.012

Cited by 10 publications

(2 citation statements)

References 25 publications

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“…A considerable attention has recently been focused on the development of technology for the growth of thick or thin films due to miniaturization requirements of electronic devices [1][2][3][4]. Besides extreme efforts to improve the performance of electronic devices that are way to obtain composite thick films with different filler contents is a gravitational casting method.…”

Section: Introductionmentioning

confidence: 99%

PZT–NZF/CF ferrite flexible thick films: Structural, dielectric, ferroelectric, and magnetic characterization

et al. 2019

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The preparation and properties of thick flexible three-phase composite films based on lead zirconium titanate (PZT) and various ferrites (nickel zinc ferrite (NZF) and cobalt ferrite (CF)) were reported in this study. Properties of three-phase composite films were compared with pure polyvinylidene fluoride (PVDF) and PZT-PVDF films. X-ray diffraction data indicated the formation of well crystallized structure of PZT and NZF/CF phases, without the presence of undesirable phases. Scanning electron micrographs showed that the ceramic particles were dispersed homogeneously in the PVDF matrix and atomic force microscopy confirmed that the size of the particles is around 30 nm. Non-saturated hysteresis loops were evident in all samples due to the presence of highly conductive ferrite phases. Under magnetic field of 10 kOe, composite films exhibited a typical ferromagnetic response. Dielectric properties were investigated in the temperature range from-128 to 250 ℃ and frequency range of 400 Hz-1 MHz. The results showed that the value of dielectric constant of the PVDF/PZT/ferrite composites increased about 25% above the one obtained for pure PVDF.

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Section: Introductionmentioning

confidence: 99%

PZT–NZF/CF ferrite flexible thick films: Structural, dielectric, ferroelectric, and magnetic characterization

et al. 2019

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“…17 For these reasons, glass is considered an applicable substitute for single crystal substrates even though it is necessary to employ buffer layers consisting of materials such as layered yttria-stabilized zirconia (YSZ) and Ta. 18,19 In this work, we investigate the ferroelectric properties of CBNO thin film grown on Pt/Ta/glass substrates via pulsed laser deposition (PLD). The polycrystalline CBNO thin film shows good ferroelectric properties with a remnant polarization of 4.8 µC/cm…”

Section: 16mentioning

confidence: 99%

Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

2016

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CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ∼9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

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Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

Gao

Wang

et al. 2016

Adv Elect Materials

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The weak bond energy and large anisotropic domain wall energy induce many special characteristics of the domain nucleation, growth, and polarization switch in triglycine sulfate (TGS) and imidazolium perchlorate (IM), two typical molecular ferroelectrics. Their domain nucleation and polarization switch are rather slower than those of conventional oxide ferroelectrics, which may be due to the weaker bond energy of hydrogen bond or van der Waals bond than that of ionic bond. These chemical bonds dominate the elastic energy, with the latter being an important component of domain wall energy and playing an important role in domain nucleation and domain growth. The ratio of anisotropic domain wall energy to Gibbs free energy is large in TGS and IM, which allows a favorable domain shape and a special domain evolution under a certain electric field. Therefore, this study not only sheds light on the physical nature but also indicates the application direction for molecular ferroelectrics.

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Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

Cited by 10 publications

References 25 publications

PZT–NZF/CF ferrite flexible thick films: Structural, dielectric, ferroelectric, and magnetic characterization

PZT–NZF/CF ferrite flexible thick films: Structural, dielectric, ferroelectric, and magnetic characterization

Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

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