Ferroelectric and optical properties of Ba0.8Sr0.2TiO3 thin film

Pontes, F. M.; Leite, E. R.; Pontes, D. S. L.; Longo, Elson; Santos, Ems; Mergulhão, S.; Pizani, P. S.; Lanciotti, F.; Boschi, T. M.; Varela, José Arana

doi:10.1063/1.1466526

Cited by 80 publications

(34 citation statements)

References 35 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another possible reason for larger values of Eg in the amorphous phase is the existence of the density of states as explained by Davis and Mott [18]. The Eg values of this research work and the bibliography of Table 3 were found above some reported [22,23,24].…”

Section: Preprints (Wwwpreprintsorg) | Not Peer-reviewed | Postedsupporting

confidence: 71%

Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Estrada-Martínez¹,

Melo-Banda²,

Páramo-García³

et al. 2017

Preprint

View full text Add to dashboard Cite

Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature-applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB:By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RFmagnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.keywords: BaxSr1-xTiO3 films; boltzmann modelling; optical band gap; deposition rate; stoichiometric content Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted:

show abstract

Section: Preprints (Wwwpreprintsorg) | Not Peer-reviewed | Postedsupporting

confidence: 71%

Set-Up Method on Properties of BaXSr1-XTiO3 Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Estrada-Martínez¹,

Melo-Banda²,

Páramo-García³

et al. 2017

Preprint

View full text Add to dashboard Cite

show abstract

“…Oscillating transmittance spectra were observed for 200 nm and 400 nm films, suggesting that they have a flat surface and a uniform thickness. [37][38][39] It was also observed that the number of oscillations decreases with decrease of film thickness. Optical absorption edge was observed at wavelength $300-350 nm (see Fig.…”

Section: Optical Characterizationmentioning

confidence: 76%

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Kumari

Ortega

Pradhan

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

(PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant $1000-1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570-630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (E g ) values from 4 eV to 3.4 eV and indirect-E g values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic. V C 2015 AIP Publishing LLC.

show abstract

“…Recently, it was reported that the ferroelectric phase transition in Ba 0.8 Sr 0.2 TiO 3 thin films occurs near room temperature. 7 In a similar way, the substitution of Zr ions on Ti sites changes strongly the character of the dielectric response close to Curie temperature of BaTi 1−x Zr x O 3 bulk ceramics and thin films. 8,9 When the Zr content is higher ͑Ͼ27% ͒, the BaTi 1−x Zr x O 3 ceramics exhibit typical relaxor-like behavior, in which the T c raises with the increase in frequency.…”

Section: Introductionmentioning

confidence: 89%

Characterization of BaTi1−xZrxO3 thin films obtained by a soft chemical spin-coating technique

Pontes

Escote

Escudeiro

et al. 2004

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Single-phase perovskite structure BaZr x Ti 1−x O 3 (BZT) ͑0.05ഛ x ഛ 0.25͒ thin films were deposited on Pt-Ti-SiO 2 -Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZr x Ti 1−x O 3 thin films, corroborate to the structural change caused by the zirconium doping. On the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan ␦ Ͻ 0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively.

show abstract

Ferroelectric and optical properties of Ba0.8Sr0.2TiO3 thin film

Cited by 80 publications

References 35 publications

Set-Up Method on Properties of Ba<sub>X</sub>Sr<sub>1-X</sub>TiO<sub>3</sub> Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Set-Up Method on Properties of Ba<sub>X</sub>Sr<sub>1-X</sub>TiO<sub>3</sub> Thin Films Deposited by RF-Magnetron Co-Sputtering by Projecting Temperature and Stoichiometric Effect

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Characterization of BaTi1−xZrxO3 thin films obtained by a soft chemical spin-coating technique

Contact Info

Product

Resources

About