FeNi alloys electroplated into porous (n‐type) silicon

Abstract

We report here a study on the electrodeposition of FeNi alloys into porous silicon (PS) made in n‐type Si substrate. The electrodeposited thin films were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X‐ray diffraction (XRD). The results show that the morphology, composition and structure of the deposited FeNi alloys are strongly dependent on the deposition conditions. A tubular structure of the FeNi alloys can be obtained with a chemical composition of (80%) Ni (20%) Fe. Finally, SEM characterization shows that a good filling of pores with FeNi alloy is achieved. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

“…Up to now, both theoretical and experimental works have focused mainly on insulation templates, while there has not been much study conducted on the growth of magnetic nanomaterials in semiconductor templates. Recently, electrodeposition of Fe, Co, Ni, and FeNi alloy into porous silicon semiconductor matrix has been studied [ 11 , 26 - 29 ]. It was found that the novel magnetization behaviors of these nanocomposite materials depended on deposits and matrices.…”

Characterisation of electroplated Ni45Fe55 thin films on n-Si (111)

“…Electrodeposition has the attractive features of cost-effectiveness, simplicity in operation and ability to make nanostructures by direct deposition on the nanoporous substrate. Interest on hydrogen-terminated silicon surfaces has grown over the years [18]. Permalloy (Ni 80 Fe 20 ) electrodeposited directly onto silicon has attracted a special attention [19][20][21][22].…”

Fabrication and Magnetic Properties of N-type Porous Silicon/Nickel Microtubes Composite

“…但是, AAO 模板容易破裂、不耐酸碱腐蚀, 且孔径 只能控制在 10~300 nm 的纳米级范围 [8] , 这些不足 限制了其实际应用。多孔硅的机械强度高、耐化学 腐蚀, 且孔径可在纳米到微米范围内调节, 并且硅 是最常见的半导体材料, 可以很好地与半导体工艺 相结合, 大大方便了其应用。 1990 年, Lehmann 等 [9] 就采用背光照法制备多 孔硅模板。背光照方法就是通过加背面光照并利用 光刻技术、聚苯乙烯小球和离子束刻蚀等方法在 N 型 Si(100)表面预压印一层排列规整的图案, 进而在 预成核的基础之上进行电化学腐蚀, 得到有序度非 常高的孔形貌 [10][11][12][13][14][15] 。迄今为止, 此法一直是制备高 质量多孔硅模板的最佳选择之一 [16][17] , 但是其中表 面预压印的方法成本太高。为了节约生产成本, 采 用电化学随机腐蚀法来制备多孔硅模板, 利用高电 压预成核方法, 可以避免复杂的预压印成核技术。 近年来, 有学者利用纳米级多孔硅制备一维纳 米磁性材料 [18][19][20][21][22][23][24][25][26][27] 。Cheng 等 [28] 和 Kazuhiro 等 [29] 分别 在 N 型和 P 型微米级多孔硅中电沉积制备了 Cu、 Pt、Pd 和 Au 等贵金属, 发现它们都是从孔底部开 始生长并生成微米棒状结构。Katsutoshi 等 [30] 发现 在不加背光照条件下, Cu 可在 P 型多孔硅中正常生 长为微米棒, 而 Ni 的沉积必须施加背光照, 围绕着 孔壁开始生长并最终形成微米管。 然而, 在 N 型多孔 硅中沉积镍的微米管状结构的研究仍鲜有报道 [31] [32] , 三个区域没有 明确的界限(如图 1(a))。使用约 7 μm 的氧化铝研磨 [34] 。从 曲线(a)和(b)可以看出, 镍颗粒的矫顽力为 11300 A/m, 大于微米管的矫顽力 9390 A/m。这是由于在形成微 米管之前体系的缺陷和晶界更多, 畴壁位移更难, 导致矫顽力更大 [22] 。 无 机 材 料 学 报 第 31 卷 图 3 沉积不同时间的镍颗粒与镍微米管的 XRD 图谱 其中 M s 取块材饱和磁化强度 [35] 。由此法估计的 Ni 微米管退磁能为 8.55×10 4 J/m 3 , 远大于块体且结晶 完好的镍的磁晶各向异性能(5.48×10 3 J/m 3 [35] )。因 此, 退磁能是影响镍微米管磁矩分布的主要因素, 造成了镍微米管的磁各向异性。…”