Femtosecond synchronously mode-locked vertical-external cavity surface-emitting laser

Zhang, Wei; Ackemann, T.; Schmid, M.; Langford, N.; Ferguson, A. I.

doi:10.1364/oe.14.001810

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…To date, mode-locked VECSELs have been demonstrated in various configurations that include high harmonic mode locking with > 100 GHz repetition rates using coupled cavities [358][359][360], MIXSELs (mode-locked integrated externalcavity surface emitting lasers) where the SESAM is integrated with the VECSEL gain element [210,[361][362][363][364], and colliding pulse mode-locking in ring cavities [365,366]. In addition, VECSELs have been mode-locked by synchronous pumping using a mode-locked Nd:YAG laser [367], mode-locked Ti:sapphire lasers [368,369], and fiber-amplified pump diodes [370]. Mode-locking could also be obtained using a Kerr lens or a combination of an SHG crystal and a dichroic mirror, provided that the pump diodes are modulated at the cavity repetition rate [66,371].…”

Section: Mode-locking Mechanismmentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

195

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Section: Mode-locking Mechanismmentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

195

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“…The actual structure consisted of four 6 nm wide In 0.9 Ga 0.1 P 0.53 As 0. 47 QWs separated by 10 nm wide barriers and surrounded by 40 nm wide cladding layers of In 0.88 Ga 0.12 P 0.26 As 0.74 . This active region is embedded in p-and n-doped InP layers.…”

Section: Ingapas/inp Materials Systemmentioning

confidence: 99%

“…A recent experimental demonstration of synchronously-pumped mode-locking was carried out by a group at Strathclyde University [47]. A quantitative study of such dynamical behavior requires both accurate microscopic inputs and accurate broadband simulation.…”

Section: Time Domain Vecsel Simulatormentioning

confidence: 99%

Quantum design of semiconductor active materials: laser and amplifier applications

Moloney

Hader

Koch³

2007

Laser & Photonics Reviews

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Abstract:We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL).Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers

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VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Femtosecond synchronously mode-locked vertical-external cavity surface-emitting laser

Cited by 7 publications

References 23 publications

Optically pumped VECSELs: review of technology and progress

Optically pumped VECSELs: review of technology and progress

Quantum design of semiconductor active materials: laser and amplifier applications

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

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