In recent years, the formation of thin, well-ordered but complex surface oxides on late transition metals has been discovered. The driving force for this line of research has been the strong incentive to increase the partial pressure of oxygen from ultra-high vacuum to conditions more relevant for heterogeneous catalysis. Here we review the present status of the research field. Compared to oxygen adatom superstructures, the structure of the surface oxides has proven to be extremely complex, and the investigations have therefore relied on a combination of several experimental and theoretical techniques. The approach to solving the structures formed on close-packed surfaces of Pd and Rh is presented in some detail. Focusing on the structures found, we show that the surface oxides share some general properties with the corresponding bulk oxides. Nevertheless, of all surface oxide structures known today, only the two-dimensional surface oxides on Pd(100) and Pt(110) have the same lattice as the bulk oxides (PdO and PtO, respectively). In addition to two-dimensional oxides, including the O–Rh–O trilayers found on Rh, one-dimensional oxides were observed at ridges or steps of open surfaces such as (110) or vicinal surfaces. Finally, we briefly report on a few studies of the reactivity of surface oxides with well-known structure.

We analyzed the intrinsic defects and the n-type-carrier concentration generated by nitrogen ion implantation in n-type GaN by deep-level-transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown on sapphire by metalorganic vapor-phase epitaxy. Nitrogen implantation with different ion doses and postimplantation rapid-thermal annealing (RTA) were investigated. We observed a growing n-type-carrier concentration and increasing defect concentration with increasing nitrogen ion implantation doses. After RTA the concentration of free carriers and deep levels as found in the as-grown state are restored. We also address contrarily seeming results from measurements of sheet resistance after N implantation published recently.

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Suppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures

Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices has been observed. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Perot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1660 nm and 1700 nm. This fits the theoretically predicted behavior for the n-type Ge material system. With further pulsed electrical injection of 500 kA/cm² it was possible to reach the lasing threshold for such edge emitters. Different lengths and widths of devices have been investigated in order to maintain best gain-absorption ratios.