FEDSS—A 2D semiconductor fabrication process simulator

Borucki, L.; Hansen, Henri; Varahramyan, Kody

doi:10.1147/rd.293.0263

Cited by 26 publications

(2 citation statements)

References 22 publications

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“…At the beginning of the 1980's, numerical implementation of simple models allowing one-dimensional ͑1D͒ or two-dimensional ͑2D͒ analysis of the electrical behavior of transistors 31,32 or of the microfabrication of integrated components [33][34][35] are already available. With the growing power of computers and the spreading of TCAD in the IC industry, the number of 2D codes grew quickly [36][37][38][39][40] and three-dimensional ͑3D͒ solutions appeared in the 1990's. [41][42][43][44] For the simulation of the microfabrication steps ͑i.e., lithography, deposition, etching, diffusion, oxidation, silicidation, etc.͒, the role of TCAD is to predict the morphology of the device as well as the distributions of doping and mechanical stresses/strains in all materials during each step.…”

Section: Introductionmentioning

confidence: 99%

Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

Senez

Armigliato

Wolf

et al. 2003

Journal of Applied Physics

100

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Articles you may be interested inConvergent beam electron diffraction measurements of relaxation in strained silicon using higher order Laue zone line splitting J. Appl. Phys. 105, 063526 (2009); 10.1063/1.3093693 Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures J. Appl. Phys. 99, 064504 (2006); 10.1063/1.2179136 Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction J. Vac. Sci. Technol. B 23, 940 (2005); 10.1116/1.1924583Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction Test structures consisting of shallow trench isolation ͑STI͒ structures are fabricated using advanced silicon ͑Si͒ technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design homemade tool, IMPACT, is upgraded and optimized to yield strain fields in deep submicron complementary metal-oxide-semiconductor devices. Residual strain in the silicon substrate is measured with micro-Raman spectroscopy ͑-RS͒ and/or convergent beam electron diffraction ͑CBED͒ for large ͑25 m͒ and medium size ͑2 m͒, while only CBED is used for deep submicron STI ͑0.22 m͒. We propose a methodology combining CBED and technology computer aided design ͑TCAD͒ with -RS to assess the accuracy of the CBED measurements and TCAD calculations on the widest structures. The method is extended to measure ͑by CBED͒ and calculate ͑by TCAD͒ the strain tensor in the smallest structures, out of the reach of the -RS technique. The capability of determining, by both measurement and calculation, the strain field distribution in the active regions of deep submicron devices is demonstrated. In particular, it is found that for these structures an elastoplastic model for Si relaxation must be assumed.

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Section: Introductionmentioning

confidence: 99%

Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

Senez

Armigliato

Wolf

et al. 2003

Journal of Applied Physics

100

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“…The first 2-D process simulator "BIRD" was reported from Stanford University (Lee 1978), which was followed by simulators like SUPRA (Chin et al 1981), BICEPS (Penumalli 1983), ROMANS-II (Maldoado et al 1983), COMPOSITE (Lorenz et al 1985), SUPREM-IV (Kump and Dutton 1988), OPUS (Nishi et al 1989), FINDPRO (Rorris et al 1990), PREDICT-2 (Fair et al 1991), etc. Recently, more exhaustive and complete 2D process simulators: FEDSS (Borucki et al 1985), SAFEPRO (O'Brien et al 1985), IMPACT (Collard and Taniguchi 1986) based on finite element approach have also been developed because of the ease of tackling moving boundary.…”

Section: Introductionmentioning

confidence: 99%

Modeling of diffusion and oxidation in two dimensions during silicon device processing

Das

1999

Bull Mater Sci

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A process simulator named "2D-DIFFUSE" has been developed where the coupled diffusion equation of dopant impurity and point defects: interstitials and vacancies, has been solved numerically in two-dimension. The interaction of point defects has been modeled assuming quasi (i.e. local) equilibrium, CIC v =CI*Cv* and constant vacancy, Cv=Cv*, conditions. Indeed, these two assumptions deeouple the two point defects diffusion equations. The processes modeled in the present version of the simulator include pre-deposition, diffusion and oxidation. The simulator is quite successful at modeling each process individually as well as integrating various processes and models. The program has also been applied to the simulation of phenomena as the dopant diffusion under various ambients, oxidation enhanced and retarded diffusion, emitter push effect etc. Comparisons between simulation based on point defect parameters from various sources have been made.

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