Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

“…EPAD with the highest initial threshold voltage, which has the highest sensitivity, also has the lowest fading. This result is in excellent agreement with our previous research on EPAD [27]. After exactly 1107.7 h (about a month and a half), EPAD with zero bias and a 4 V initial threshold voltage has a fading of 2.02%.…”

“…All transistors have an initial threshold voltage: V th = 4 V. If we look at the sensitivity of these transistors in Figure 18, we notice that the zero-biased EPAD has a much higher sensitivity at the beginning of the experiment. This phenomenon has already been noted before [27], but we could not explain it at the time. In the discussion, we will try to explain this unusual occurrence in semiconductor dosimeters.…”

“…EPADs with zero bias are not degraded, and curves that are describing the degradation of Vth and ZTC are only converging to zero. Degradation of transfer characteristic of EPADs can be explained as a parallel resistive path that was opened in the floating-gate MOS structure [27]. In our earlier work, we showed that after annealing at 70 • C transfer characteristics had recovered.…”

“…The idea of using EPAD as an radiation dosimeter was first introduced in Edgecock et al [25] in 2009., and in 2012., a doctoral dissertation on the same topic was published by the same group of authors [26]. However, no scientific papers on EPADs except our [27] have been published to date. The aforementioned group of authors irradiated EPADs to an absorbed dose of about 100 Gy, and the initial threshold voltage varied from the parameters.…”